Features
- Low forward voltage (Vf) drop over temperature
- Zero reverse-recovery charge for fast switching operations
- Robust MPS technology
- High reverse-voltage blocking capability
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Blocking Voltage | Current Rating | Generation | Forward Voltage(VF(type)) | Maximum Continuous Current (IF) | Total Capacitive Charge (QC (typ)) | Total Power Dissipation (PTOT) | Package | Qualification | Recommended For New Design? |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
CSD01060E | 600 V | 1 A | Gen 1 | 1.6 V | 1 A | 3.3 nC | 21.4 W | TO-252-2 | Industrial | Yes |
Document Type | Document Name |
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Application Notes | |
Application Notes | |
Application Notes | |
Data Sheets | |
Product Catalog | |
Sales Terms | |
Sales Terms | This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
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