5 kW Boost and Pure Sine Wave Inverter

TD-70-120VDC-120VAC-5kW

Download Datasheet

This reference design is unavailable for download but may be licensed and customized through our partners, Telcodium, with joint applications support from Wolfspeed. Learn more about the design at Telcodium.com. This reference design demonstrates the application of Wolfspeeds 650V C3M™ SiC MOSFETs to create a 5kW High Efficiency DC/AC converter for portable power stations. This design is compatible with a 70-120V DC battery allowing it to power standard 120V/240V, 50Hz/60Hz AC equipment. The optimized inverter and firmware design allows the system to provide a peak power of up to 10kW needed at start up. The use of 650V C3M™ 15mOhm SiC MOSFET’s in a TO-247-4 enables high frequency operation while delivering low switching and conduction losses required for efficient, lighter and portable power stations. The design is fully protected with overvoltage and short circuit protection. The design accomplishes

Peak efficiencies of >94%
Power densities of 2kW/L

Specifications

Input Voltage : 69.5V-117.6 DC
Output Voltage : 120V/240V AC
Output Power : 5kW nominal, 10kW peak
Multiphase Boost converter for low current ripple
Transformer-less inverter design enables high power density

Product shot of Telcodium's Reference Design of a 5kW high efficiency, high power, pure sine wave output DC to AC converter.

Product shot of Telcodium's Reference Design of a 5kW high efficiency, high power, pure sine wave output DC to AC converter.

Applications

Portable power stations
Back-Up power systems

What's Included

Product Datasheet

Request Separately

Private Labelling, ODM Solution, Licensing Agreement

Product Compatibility

Documents, Tools, & Support

Block Diagram
Technical & Sales Documents
Tools & Support

td-70-120vdc-120vac-5kw block diagram

td-70-120vdc-120vac-5kw block diagram

Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.

Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.

C6D50065D

650V Discrete SiC Schottky Diodes

Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.

Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.

C6D50065D

650V Discrete SiC Schottky Diodes

Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.

Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.

C6D50065D

650V Discrete SiC Schottky Diodes

Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.

Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.

C6D50065D

650V Discrete SiC Schottky Diodes

Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.

Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.

C6D50065D

650V Discrete SiC Schottky Diodes

Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.

Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.

C6D50065D

650V Discrete SiC Schottky Diodes

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

C3M0015065K

Silicon Carbide Power 650V MOSFET C3M™ Planar MOSFET Technology N-Channel Enhancement Mode

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

C3M0015065K

Silicon Carbide Power 650V MOSFET C3M™ Planar MOSFET Technology N-Channel Enhancement Mode

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

C3M0015065K

Silicon Carbide Power 650V MOSFET C3M™ Planar MOSFET Technology N-Channel Enhancement Mode

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

C3M0015065K

Silicon Carbide Power 650V MOSFET C3M™ Planar MOSFET Technology N-Channel Enhancement Mode

Knowledge Center

Design Resources

Key Testing Considerations for Migrating from Silicon (Si) to Silicon Carbide (SiC) in Power Designs

Register Now Webinars

Powerful Perspectives

Partnering for Maximum Impact: An Interview with Paul Wheeler

Continue Reading Thought Leadership

Breaking the Mold: Redefining What’s Possible Through Product Engineering 

Continue Reading Thought Leadership

Support

Technical SupportPower Applications Forum

Buy OnlineFind a Distributor

Request SamplesVisit the Sample Center