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Wolfspeed Materials wafer for ICSCRM 2025

Growing quality at scale

Unlocking the industry’s ability to manufacture at scale with production grade 200mm silicon carbide bare and epiwafer materials

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Small Form Factor, Full Power

Achieve 10.5 kW/L power density in your next Dual Active Bridge Isolated DC/DC converter and scale to higher power levels through a modular block approach

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Welcome SVP of Global Sales and Chief Marketing Officer, Matthias Buchner

Read the Press Release

Designer's Guide To SiC

Join our experts in live sessions and uncover how to drive maximum performance in rugged high voltage environments

Register for Virtual Event
Wolfspeed Materials wafer for ICSCRM 2025

Growing quality at scale

Unlocking the industry’s ability to manufacture at scale with production grade 200mm silicon carbide bare and epiwafer materials

View Portfolio

Small Form Factor, Full Power

Achieve 10.5 kW/L power density in your next Dual Active Bridge Isolated DC/DC converter and scale to higher power levels through a modular block approach

View Reference Design

Welcome SVP of Global Sales and Chief Marketing Officer, Matthias Buchner

Read the Press Release

Designer's Guide To SiC

Join our experts in live sessions and uncover how to drive maximum performance in rugged high voltage environments

Register for Virtual Event
Wolfspeed Materials wafer for ICSCRM 2025

Growing quality at scale

Unlocking the industry’s ability to manufacture at scale with production grade 200mm silicon carbide bare and epiwafer materials

View Portfolio

The Power to Make It Real™

At Wolfspeed, we are the creators of the next-generation semiconductor technology that powers the world’s most disruptive innovations. In other words, it’s our job to make humankind’s greatest ambitions – real.

For us, making it real means making it the Wolfspeed way. We deliver unparalleled reliability on a massive scale from the first U.S.-based silicon carbide corridor with end-to-end substrate and power device fabrication to fulfill the world’s growing demand.

Latest Product Releases

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Composite image of the top & bottom of Wolfspeed's Discrete Silicon Carbide (SiC) MOSFET in a TSC (U2) package.
1200 V Automotive Qualified SiC MOSFET in Top-Side Cooled package
High power dissipation capability in industry-standard TSC package. PPAP capable, optimized for high-voltage DC/DC converters and EV battery chargers.
1200 V Automotive Qualified Bare Die SiC MOSFETs – Gen 4
Qualified for continuous operation at 185°C junction temperature. Optimized for automotive powertrain, motor drives & circuit breakers.
Front & bottom view of the Wolfspeed YM3L silicon carbide power module.
1200 V Automotive Qualified 6-pack (3-phase) SiC Power Module Family
High reliability and easy integration with a direct-cooled Pin Fin baseplate. Optimized for traction inverters in heavy-duty, and agricultural vehicles.
Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
1700 V Industrial qualified SiC MOSFET Family
30 mΩ RDS(on) family of discrete devices in variety of packaging options. Optimized for solar inverters and switched mode power supplies.
Product image of the Wolfspeed Wolfpack SiC Power Module in the FM3 package.
1200 V Industrial Qualified, Full-Bridge ​SiC Power Module – Gen 4 ​
17 mΩ module in industry-standard package with an option of pre-applied thermal interface material. Optimized for EV chargers, high-efficiency converters & renewable energy.
Product rendering of three Wolfspeed Silicon Carbide Bare Die MOSFETs.
2300 V Bare Die Silicon Carbide MOSFETs – Gen 4
Low resistance at operating temperature. Optimized for UPS, renewable energy & medium voltage drives.
Composite image of the top & bottom of Wolfspeed's Discrete Silicon Carbide (SiC) MOSFET in a TSC (U2) package.
1200 V Automotive Qualified SiC MOSFET in Top-Side Cooled package
High power dissipation capability in industry-standard TSC package. PPAP capable, optimized for high-voltage DC/DC converters and EV battery chargers.
1200 V Automotive Qualified Bare Die SiC MOSFETs – Gen 4
Qualified for continuous operation at 185°C junction temperature. Optimized for automotive powertrain, motor drives & circuit breakers.
Front & bottom view of the Wolfspeed YM3L silicon carbide power module.
1200 V Automotive Qualified 6-pack (3-phase) SiC Power Module Family
High reliability and easy integration with a direct-cooled Pin Fin baseplate. Optimized for traction inverters in heavy-duty, and agricultural vehicles.
Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
1700 V Industrial qualified SiC MOSFET Family
30 mΩ RDS(on) family of discrete devices in variety of packaging options. Optimized for solar inverters and switched mode power supplies.
Product image of the Wolfspeed Wolfpack SiC Power Module in the FM3 package.
1200 V Industrial Qualified, Full-Bridge ​SiC Power Module – Gen 4 ​
17 mΩ module in industry-standard package with an option of pre-applied thermal interface material. Optimized for EV chargers, high-efficiency converters & renewable energy.
Product rendering of three Wolfspeed Silicon Carbide Bare Die MOSFETs.
2300 V Bare Die Silicon Carbide MOSFETs – Gen 4
Low resistance at operating temperature. Optimized for UPS, renewable energy & medium voltage drives.
Composite image of the top & bottom of Wolfspeed's Discrete Silicon Carbide (SiC) MOSFET in a TSC (U2) package.
1200 V Automotive Qualified SiC MOSFET in Top-Side Cooled package
High power dissipation capability in industry-standard TSC package. PPAP capable, optimized for high-voltage DC/DC converters and EV battery chargers.
1200 V Automotive Qualified Bare Die SiC MOSFETs – Gen 4
Qualified for continuous operation at 185°C junction temperature. Optimized for automotive powertrain, motor drives & circuit breakers.
Front & bottom view of the Wolfspeed YM3L silicon carbide power module.
1200 V Automotive Qualified 6-pack (3-phase) SiC Power Module Family
High reliability and easy integration with a direct-cooled Pin Fin baseplate. Optimized for traction inverters in heavy-duty, and agricultural vehicles.
Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
1700 V Industrial qualified SiC MOSFET Family
30 mΩ RDS(on) family of discrete devices in variety of packaging options. Optimized for solar inverters and switched mode power supplies.

The Pioneers of Silicon Carbide

About Wolfspeed

Wolfspeed continues to lead the industry transition from silicon to silicon carbide across both materials and devices as the world’s only pure-play, vertically integrated silicon carbide company. As the pioneers of silicon carbide, we are committed to powering a better world for everyone.

Who We Are

Product Portfolio

Our solutions, including silicon carbide material, Power Modules, Discrete Power Devices and Power Die Products, are helping make cars, planes, renewables, race teams, cities, and everything in between, better, faster, greener, cooler, and more sustainable for billions to live better lives.

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Tools & Support

We offer time saving Design Support Tools for the most in-demand silicon carbide power systems and devices with hands-on engineering support.

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Latest News

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Oct 29, 2025

Wolfspeed Reports Financial Results for the First Quarter of Fiscal 2026

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Oct 22, 2025

Wolfspeed Adds Proven Power Semiconductor Leader Matthias Buchner to Executive Team, Strengthening Market Position as Company Accelerates 200 mm Silicon Carbide Focus

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Oct 16, 2025

Wolfspeed, Inc. Announces Date of Fiscal First Quarter Earnings Call for October 29, 2025

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Sep 29, 2025

Wolfspeed Appoints Five Experienced Directors to its Board

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