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  • Bare Die Silicon Carbide MOSFETs
  • 1200 V Bare Die SiC MOSFETs – Gen 2

1200 V Bare Die SiC MOSFETs – Gen 2

Wolfspeed's Gen 2 family of 1200 V silicon carbide (Sic) MOSFETs are optimized for use in high power applications
Note Last Time Buy.
  • Overview
  • Parametric Data
  • Product Details
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  • Overview
  • Parametric Data
  • Product Details
  • Tools & Support

Parametric Data

1200 V Bare Die SiC MOSFETs – Gen 2

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1200 V Bare Die SiC MOSFETs – Gen 2

Product SKU
Status
CPM2-1200
Last Time Buy

End of Section

Product Details

Features

  • Robust intrinsic diode with low reverse recovery charge (Qrr)
  • High-speed switching with low output capacitance
  • Low conduction losses over temperature
  • Avalanche ruggedness

Benefits

  • Improves system efficiency with lower switching loss
  • Reduces system size; weight; and cooling requirements
  • Increased power density

Typical Applications

  • Renewable energy Inverters
  • High voltage DC/DC converters
  • Switch Mode Power Supplies

Tools & Support

  • Technical & Sales Documents
  • Tools & Support
  • Compliance

Documents

Document Type
Document Name
Last Updated
Application Notes
PRD-04814: Design Options for Wolfspeed® Silicon Carbide MOSFET Gate Bias Power Supplies
01/2025
Application Notes
PRD-08937: Impact of VGS on SiC MOSFET Characteristics
New
01/2025
Application Notes
PRD-08296: SiC MOSFET Short Circuit Events
11/2023
Application Notes
PRD-06933: Capacitance Ratio and Parasitic Turn-on
01/2023
Product Catalog
Power Product Line Card
01/2025
Sales Terms
Wolfspeed, Inc. Sales Terms and Conditions
04/2025

Knowledge Center

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Design Resources

Key Testing Considerations for Migrating from Silicon (Si) to Silicon Carbide (SiC) in Power Designs

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Powerful Perspectives

Partnering for Maximum Impact: An Interview with Paul Wheeler

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PowerMakers

Breaking the Mold: Redefining What’s Possible Through Product Engineering  

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