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1200 V Bare Die SiC MOSFETs – Gen 2

1200 V Bare Die SiC MOSFETs – Gen 2

1200V Bare Die SiC MOSFETs - Gen 2
Wolfspeed's Gen 2 family of 1200V Silicon Carbide MOSFETs are optimized for use in high power applications
NOTE: Not recommended for new designs. 1200 V Bare Die Silicon Carbide MOSFETs – Gen 3 is the recommended replacement.
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Blocking Voltage
RDS(ON) at 25°C
Current Rating
Gate Charge Total
Output Capacitance
Reverse Recovery Charge (Qrr)
Reverse Recovery Time (Trr)
Maximum Junction Temperature
Generation
Recommended For New Design?
CPM2-1200-0160A
1200 V
160 mΩ
18 A
40 nC
55 pF
192 nC
20 ns
175 °C
Gen 2
No
CPM2-1200-0080A
1200 V
80 mΩ
36 A
71 nC
92 pF
152 nC
24 ns
175 °C
Gen 2
No
CPM2-1200-0040A
1200 V
40 mΩ
60 A
131 nC
157 pF
964 nC
63 ns
175 °C
Gen 2
No
CPM2-1200-0025A
1200 V
25 mΩ
81 A
161 nC
235 pF
406 nC
45 ns
175 °C
Gen 2
No
Features
  • Robust intrinsic diode with low reverse recovery charge (Qrr)
  • High-speed switching with low output capacitance
  • Low conduction losses over temperature
  • Avalanche ruggedness
Benefits
  • Improves system efficiency with lower switching loss
  • Reduces system size; weight; and cooling requirements
  • Increased power density
Applications
  • Renewable energy Inverters
  • High voltage DC/DC converters
  • Switch Mode Power Supplies
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3.6kW Bridgeless Totem-Pole PFC Reference Design Training

Join Yuequan Hu, Power Applications Engineer with Wolfspeed, as he demonstrates the application of Wolfspeed’s C3M™ 650 V Silicon Carbide MOSFET Technology in TOLL package to create a 3.6kW bridgeless totem-pole PFC for server power supply, data center power supply, mining power supply, and telecom systems.
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