Features
- Robust intrinsic diode with low reverse recovery charge (Qrr)
- High-speed switching with low output capacitance
- Low conduction losses over temperature
- Avalanche ruggedness
1200 V Bare Die SiC MOSFETs – Gen 2
Wolfspeed's Gen 2 family of 1200 V Silicon Carbide MOSFETs are optimized for use in high power applications
NOTE: Not recommended for new designs. 1200 V Bare Die Silicon Carbide MOSFETs – Gen 3 is the recommended replacement.
Parametric Data
1200 V Bare Die SiC MOSFETs – Gen 2
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1200 V Bare Die SiC MOSFETs – Gen 2
Product SKU | Buy Online | Data Sheet | Status | Blocking Voltage | RDS(ON) at 25°C | Current Rating | Gate Charge Total | Output Capacitance | Reverse Recovery Charge (Qrr) | Reverse Recovery Time (Trr) | Maximum Junction Temperature | Generation | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
NRND | 1200 V | 80 mΩ | 36 A | 71 nC | 92 pF | 152 nC | 24 ns | 175 °C | Gen 2 | Industrial | |||
NRND | 1200 V | 40 mΩ | 60 A | 131 nC | 157 pF | 964 nC | 63 ns | 175 °C | Gen 2 | Industrial | |||
NRND | 1200 V | 25 mΩ | 81 A | 161 nC | 235 pF | 406 nC | 45 ns | 175 °C | Gen 2 | Industrial |
Product Details
Benefits
- Improves system efficiency with lower switching loss
- Reduces system size; weight; and cooling requirements
- Increased power density
Typical Applications
- Renewable energy Inverters
- High voltage DC/DC converters
- Switch Mode Power Supplies
Tools & Support
- Technical & Sales Documents
- Tools & Support
- Compliance
Documents
Document Type | Document Name | Last Updated |
|---|---|---|
| Application Notes | 11/2023 | |
| Application Notes | 01/2023 | |
| Application Notes | 11/2021 | |
| Product Catalog | 05/2024 | |
| Sales Terms | This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
| 04/2024 |
| Sales Terms | 12/2021 |
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