Features
- 1200-volt Schottky rectifier
- Zero reverse recovery current
- Zero forward recovery voltage
- High-frequency operation
- Temperature-independent switching behavior
- Extremely fast switching
- Positive temperature coefficient on VF
C2D10120A
1200 V; 10 A; TO-220-2 package; Gen 2 Discrete Silicon Carbide (SiC) Schottky Diode
NOTE: Not recommended for new designs. C4D10120A is the recommended replacement.
Wolfspeed’s 1200 V Discrete Silicon Carbide (SiC) Schottky Diodes feature the MPS (Merged PiN Schottky) design which is more robust and reliable than standard Schottky barrier diodes. Pairing Wolfspeed Silicon Carbide diodes with Silicon Carbide MOSFETs creates a powerful combination of higher efficiency and reduced component pricing when purchased together.
Products
C2D10120A
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C2D10120A
Product SKU | Blocking Voltage | Current Rating | Generation | Forward Voltage(VF(type)) | Maximum Continuous Current (IF) | Total Capacitive Charge (QC (typ)) | Total Power Dissipation (PTOT) | Package | Qualification | Recommended For New Design? |
|---|---|---|---|---|---|---|---|---|---|---|
C2D10120A | 1200 V | 10 A | Gen 2 | 1.6 V per leg | 14.5 A | 61 nC | 312 W | TO-220-2 | Industrial | No |
Benefits
- Replace bipolar with unipolar rectifiers
- Essentially no switching losses
- Higher efficiency
- Reduction of heat-sink requirements
- Parallel devices without thermal runaway
Documents, Tools & Support
- Technical & Sales Documents
- Tools & Support
Documents
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Document Type | Document Name |
|---|---|
| Application Notes | |
| Application Notes | |
| Data Sheets | |
| Product Catalog | |
| Sales Terms | |
| Sales Terms | This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
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