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C2D10120A

1200 V; 10 A; TO-220-2 package; Gen 2 Discrete Silicon Carbide (SiC) Schottky Diode
NOTE: Not recommended for new designs. C4D10120A is the recommended replacement.

Wolfspeed’s 1200 V Discrete Silicon Carbide (SiC) Schottky Diodes feature the MPS (Merged PiN Schottky) design which is more robust and reliable than standard Schottky barrier diodes. Pairing Wolfspeed Silicon Carbide diodes with Silicon Carbide MOSFETs creates a powerful combination of higher efficiency and reduced component pricing when purchased together.

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C2D10120A

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C2D10120A

Product SKU
Blocking Voltage
Current Rating
Generation
Forward Voltage(VF(type))
Maximum Continuous Current (IF)
Total Capacitive Charge (QC (typ))
Total Power Dissipation (PTOT)
Package
Qualification
Recommended For New Design?
C2D10120A
1200 V
10 A
Gen 2
1.6 V per leg
14.5 A
61 nC
312 W
TO-220-2
Industrial
No
Features
  • 1200-volt Schottky rectifier
  • Zero reverse recovery current
  • Zero forward recovery voltage
  • High-frequency operation
  • Temperature-independent switching behavior
  • Extremely fast switching
  • Positive temperature coefficient on VF
Benefits
  • Replace bipolar with unipolar rectifiers
  • Essentially no switching losses
  • Higher efficiency
  • Reduction of heat-sink requirements
  • Parallel devices without thermal runaway

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This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
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