C2M0160120D
1200 V, 160 mΩ, TO-247-3 package, Industrial qualified, Discrete SiC MOSFET
Note Obsolete. Recommended replacement:C3M0160120D
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Documents
20 Documents Available
Document Type | Document Name | Last Updated |
|---|---|---|
| Data Sheets | 10/2024 | |
| Design Resource | 09/2024 | |
| Application Notes | 02/2025 | |
| Application Notes | 01/2025 | |
| Application Notes | 01/2025 | |
| Application Notes | 09/2024 | |
| Application Notes | 07/2024 | |
| Application Notes | 01/2024 | |
| Application Notes | 12/2023 | |
| Application Notes | 11/2023 | |
| Application Notes | 01/2023 | |
| Application Notes | 09/2022 | |
| Application Notes | 02/2022 | |
| Test Report | 03/2022 | |
| White Papers | 11/2024 | |
| Product Catalog | 01/2025 | |
| Sales Sheets & Flyers | 06/2023 | |
| Sales Sheets & Flyers | 03/2022 | |
| Sales Terms | 04/2025 | |
| Sales Terms | Power Product Packing & Shipping Reference Guide This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs.
| 03/2025 |