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Blocking Voltage 1700 V
Current Rating at 25°C 5 A
Rds(on) at 25°C 1000 mΩ
Package TO-247-3
Gate charge total 13 nC
Maximum junction temperature 150 °C
Lead-frame materials 100% matte, tin solder finish over a copper lead frame

2nd-Generation Z-FET®
1700 V, 1 Ω, Silicon-Carbide MOSFET

SKU: C2M1000170D


C2M1000170D replaces silicon MOSFETs in auxiliary power supplies where reliable, efficient power conversion from high-voltage buses is required to operate system logic, displays, cooling fans, etc. 

See our complete list of reference designs for examples of popular topologies commonly used with SiC today. Download our LTspice or PLECS models or try our SpeedFit design simulator.

Features 

  • High-speed switching with low capacitances 
  • High blocking voltage with low RDS(on)
  • Easy to parallel and simple to drive 
  • Resistant to latch-up 
  • Halogen-free, RoHS-compliant

Documents