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  • C2M1000170D

C2M1000170D

1700 V, 1000 mΩ, TO-247-3 package, Industrial qualified, Discrete SiC MOSFET
Note Obsolete. Recommended replacement:C3M0900170D
Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
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Parametric Data

C2M1000170D

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C2M1000170D

Product SKU
Buy Online
Data Sheet
CAD Model
Status
Blocking Voltage
RDS(ON) at 25°C
Current Rating
Tjmax
Package
Qualification
Technology
C2M1000170D
Obsolete
1700 V
1000 mΩ
5 A
150 °C
TO-247-3
Industrial
C2M

End of Section

Documents, Tools & Support

  • Technical & Sales Documents
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Documents

15 Documents Available
Document Type
Document Name
Last Updated
Data Sheets
C2M1000170D
10/2024
Application Notes
PRD-05652: Mounting Recommendations and Thermal Measurement for Wolfspeed® SiC Power Devices in Through-Hole Packages
02/2025
Application Notes
PRD-04814: Design Options for Wolfspeed® Silicon Carbide MOSFET Gate Bias Power Supplies
01/2025
Application Notes
PRD-08907: Mitigating EMI with SiC Solutions in Renewable Energy & Grid-Connected Power Converters
New
01/2025
Application Notes
PRD-06752: PCB Layout Techniques for Discrete SiC MOSFETs
09/2024
Application Notes
PRD-08710: Measuring Stray Inductance in Power Electronics Systems
07/2024
Application Notes
PRD-03043: Measuring Switching and Conduction Losses in LTspice® Simulation Software
01/2024
Application Notes
PRD-06701: Thermal Management of Bottom-Side Cooled Surface-Mount Devices & Design Considerations
12/2023
Application Notes
PRD-08296: SiC MOSFET Short Circuit Events
11/2023
Application Notes
PRD-06933: Capacitance Ratio and Parasitic Turn-on
01/2023
Application Notes
PRD-05653: Recommended Solder Profiles for Power Products
09/2022
White Papers
Driving Industrial E-Mobility With Silicon Carbide Semiconductors
11/2024
Product Catalog
Power Product Line Card
01/2025
Sales Terms
Wolfspeed, Inc. Sales Terms and Conditions
04/2025
Sales Terms
Power Product Packing & Shipping Reference Guide
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs.
03/2025

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Key Testing Considerations for Migrating from Silicon (Si) to Silicon Carbide (SiC) in Power Designs

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Partnering for Maximum Impact: An Interview with Paul Wheeler

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