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Blocking Voltage 900 V
Current Rating at 25°C 23 A
Rds(on) at 25°C 120 mΩ
Package TO-247-3
Maximum junction temperature 150 C
Reverse-Recover Time (Trr) 24 ns

Silicon Carbide Power MOSFET
C3MTM Planar MOSFET Technology
N-Channel Enhancement Mode

SKU: C3M0120090D


Cree introduces its latest breakthrough in SiC power device technology: the industry’s first 900V MOSFET platform. Optimized for high frequency power electronics applications, including renewable energy inverters, electric vehicle charging systems, and three-phase industrial power supplies, the new 900V platform enables smaller and higher efficiency next-generation power conversion systems at cost parity with silicon-based solutions.

See our complete list of reference designs for examples of popular topologies commonly used with SiC today. Download our LTspice or PLECS models or try our SpeedFit design simulator.

Features

  • High speed switching with low capacitances
  • High blocking voltage with low RDS(on)
  • Avalanche ruggedness
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Easy to parallel and simple to drive

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