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Blocking Voltage 1000 V
Current Rating at 25°C 22 A
RDS(ON) at 25°C 120 mΩ
Package TO-247-4
Gate charge total 21.5 nC
Maximum junction temperature 150 °C
Reverse-Recovery Charge (Qrr) 154 nC
Output Capacitance 40 pF
Reverse-Recover Time (Trr) 16 ns

Silicon Carbide Power MOSFET
C3MTM Planar MOSFET Technology
N-Channel Enhancement Mode

SKU: C3M0120100K

Wolfspeed introduces its latest breakthrough in SiC power device technology with the industry’s only 1kV SiC MOSFET in a newly optimized package suitable for fast switching devices.  Optimized for electric-vehicle charging systems, and three-phase industrial power supplies, the new 1kV device addresses many power design challenges by providing a unique device with low on-Resistance, very low output capacitance and low source inductance for a perfect blend of low switching losses and low conduction losses.  Check out the new 20kW LLC reference design which includes schematics and BOM to reduce your development time and get your products to the market faster.   

See our complete list of reference designs for examples of popular topologies commonly used with SiC today. Download our LTspice or PLECS models or try our SpeedFit design simulator.


  • Minimum of 1kV Vbr across entire operating temperature range (no need to derate)
  • low source inductance package with separate driver source pin
  • > 8mm of creepage/clearance between drain and source
  • High-speed switching with low output capacitance
  • High blocking voltage with low RDS(on)
  • Avalanche ruggedness



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