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C3M0280090D

Wolfspeed C3M0280090D 900V SiC MOSFET Power Converter
Blocking Voltage 900 V
Current Rating at 25°C 11.5 A
RDS(ON) at 25°C 280 mΩ
Package TO-247-3
Gate charge total 9.5 nC
Maximum junction temperature 150 C
Reverse-Recover Time (Trr) 20 ns

Silicon Carbide Power MOSFET
C3MTM Planar MOSFET Technology
N-Channel Enhancement Mode

SKU: C3M0280090D

Cree introduces its latest breakthrough in SiC power device technology: the industry’s first 900V MOSFET platform. Optimized for high frequency power electronics applications, including renewable energy inverters, electric vehicle charging systems, and three-phase industrial power supplies, the new 900V platform enables smaller and higher efficiency next-generation power conversion systems at cost parity with silicon-based solutions.

See our complete list of reference designs for examples of popular topologies commonly used with SiC today. Download our LTspice or PLECS models or try our SpeedFit design simulator.

Features

  • High speed switching with low capacitances
  • High blocking voltage with low RDS(on)
  • Avalanche ruggedness
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Easy to parallel and simple to drive

Documents

Articles and Papers

Document Name Date Updated Download
Wolfspeed Launches a New Silicon Carbide MOSFET for EV Inverters May 17, 2019

Data Sheets

Document Name Date Updated Download
C3M0280090D
Version: A
Jul 10, 2018

Design Files

Document Name Date Updated Download
Access Reference Designs Jun 26, 2019

Line Card

Document Name Date Updated Download
Power Line Card Nov 1, 2019

MOSFET Product Ecology

Document Name Date Updated Download
MOSFET TO-247-3 High Reliability Packages REACh Declaration
C3M0021120D, C3M0032120D, C3M0065090D, C3M0075120D, C3M0120090D, C3M0280090D
Jan 24, 2020
MOSFET TO-247-3 High Reliability Packages RoHS Declaration Nov 18, 2019
MOSFET TO-247-3 Packages REACh Declaration
C2M0025120D, C2M0040120D, C2M0045170D, C2M0080120D, C2M0160120D, C2M0280120D, C2M1000170D, CMF10120D, CMF20120D
Jan 24, 2020
TO-247-3 Packages RoHS Declaration
Version: RS3003052018
C2M0025120D, C2M0040120D, C2M0040170D, C2M0080120D, C2M0160120D, C2M0280120D, C2M1000170D, C3M0065090D, C3M0120090D, C3M0280090D, CMF10120D, CMF20120D
Nov 9, 2018

Power Application Notes

Document Name Date Updated Download
Application Considerations for Silicon-Carbide MOSFETs Nov 19, 2015
Performance Evaluations of Hard Switching Interleaved DC/DC Boost Converter with New Generation Silicon Carbide MOSFETs Jun 26, 2019
SiC MOSFET Double Pulse Fixture
[Design only; boards no longer available]
Jul 19, 2019
SiC MOSFET Isolated Gate Driver Jun 26, 2019

Sales Terms

Document Name Date Updated Download
Sales Terms and Conditions
Version: M
Jul 19, 2019
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