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1200 V Discrete Silicon Carbide Schottky Diodes
C4D08120E
1200 V, 8 A, TO-252-2 package, Gen 4 Discrete SiC Schottky Diode
Wolfspeed's 1200 V Discrete Silicon Carbide (SiC) Schottky Diodes feature the MPS (Merged PiN Schottky) design which is more robust and reliable than standard Schottky barrier diodes. Pairing Wolfspeed Silicon Carbide diodes with Silicon Carbide MOSFETs creates a powerful combination of higher efficiency and reduced component pricing when purchased together.
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1200 V Discrete Silicon Carbide Schottky Diodes
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1200 V Discrete Silicon Carbide Schottky Diodes
Product SKU | Buy Online | Data Sheet | CAD Model | Blocking Voltage | Current Rating | Forward Voltage(VF(type)) | Maximum Continuous Current (IF) | Total Capacitive Charge (QC (typ)) | Total Power Dissipation (PTOT) | Package | Qualification | Recommended For New Design? |
---|---|---|---|---|---|---|---|---|---|---|---|---|
C4D08120E | 1200 V | 8 A | 1.5 V | 8 A | 37 nC | 137 W | TO-252-2 | Industrial | Yes |
Documents, Tools & Support
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Documents
Document Type | Document Name | Last Updated |
---|---|---|
Application Notes | 09/2022 | |
Application Notes | 02/2022 | |
Application Notes | 09/2015 | |
Application Notes | 05/2023 | |
Data Sheets | 10/2023 | |
Product Catalog | 02/2024 | |
Sales Terms | 12/2021 | |
Sales Terms | This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
| 02/2024 |
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