|Document Name||Date Updated||Download|
|Comparing Cree SiC MOSFET Module to Silicon IGBT-based Module||Oct 12, 2017|
|Isolation Voltage||1200 V|
|Output Peak Current||9 A|
|Mounting||Direct low inductance|
|Maximum Switching Frequency||64 kHz|
|SiC Products Supported||CASXXXM12BM2 family|
Gate driver board (engineering solution)
Wolfspeed’s CGD15HB62P1 is a two-channel gate driver for 1200V SiC MOSFET power modules. Each of the two gate drive channels is protected by a desaturation circuit. In the event of a short circuit, the voltage across the MOSFET (VDS) rises until it hits a threshold which causes the desaturation circuit to drive both gate drive channels to their off state.
Download its reference design.
- 2 output channels
- Isolated power supply
- Direct mount low inductance design
- Short circuit protection
- Under voltage protection
- Driver for 1.2kV, SiC MOSFET modules
- DC Bus voltage up to 900V
Note: Not Recommended for New Designs, CGD1200HB2P-BM2 is Recommended for New Designs.