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Blocking Voltage 1700 V
Current Rating at 25°C 40 A
RDS(ON) at 25°C 80 mΩ
Package Bare Die
Total Switching Energy Loss 1.2 mJ
Gate charge total 120 nC
Output Capacitance 105 pF
Reverse-Recover Time (Trr) 36 ns

Silicon Carbide Power MOSFET
C2M Planar MOSFET Technology
N-Channel Enhancement Mode

SKU: CPM2-1700-0080B

Wolfspeed introduces its latest breakthrough in SiC power device technology: the industry’s first SiC MOSFET products rated at 1700V.  Optimized for high-frequency power electronics applications, including High-voltage DC/DC converters.  Capable of supporting new 1500V renewable-energy requirements, and three-phase industrial power supplies, the new 1700-V platform enables smaller and higher-efficiency next-generation power conversion systems.

Download our LTspice model or buy now from Semidice.

See our complete list of reference designs for examples of popular topologies commonly used with SiC today. Download our LTspice or PLECS models or try our SpeedFit design simulator.


  • Minimum of 1700V of VBR across the entire operating temperature range
  • High-speed switching with low capacitances
  • Avalanche ruggedness
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Easy to parallel and simple to drive

Note: CPM2-1700-0080B is NOT recommended for new designs. The recommended equivalent is: CPM2-1700-0045B



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