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CPM2 1700 0080B

CPM2-1700-0080B

Wolfspeed CPM2-1700-0080B 1700V SiC MOSFET Power Converter
Silicon Carbide Power MOSFET C2M Planar MOSFET Technology N-Channel Enhancement Mode
NOTE: Not recommended for new designs.

Wolfspeed introduces its latest breakthrough in SiC power device technology: the industry’s first SiC MOSFET products rated at 1700V.  Optimized for high-frequency power electronics applications; including High-voltage DC/DC converters.  Capable of supporting new 1500V renewable-energy requirements; and three-phase industrial power supplies; the new 1700-V platform enables smaller and higher-efficiency next-generation power conversion systems.

Features

  • Minimum of 1700V of VBR across the entire operating temperature range
  • High-speed switching with low capacitances
  • Avalanche ruggedness
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Easy to parallel and simple to drive
Product SKU
Data Sheet
Blocking Voltage
RDS(ON) at 25°C
Generation
Current Rating
Gate Charge Total
Output Capacitance
Package
Recommended For New Design?
Qualification
CPM2-1700-0080B
1700 V
80 mΩ
Gen 2
40 A
120 nC
105 pF
Bare Die
No
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Application Notes
Application Notes
[Design only; boards no longer available]
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Wolfspeed Silicon Carbide MOSFETs address many power design challenges by providing devices with low on-resistance, very low output capacitance, and low source inductance for a perfect blend of low switching losses and low conduction losses. Read on to learn how these advantages are applied in higher-power unidirectional OBCs.
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3.6kW Bridgeless Totem-Pole PFC Reference Design Training

Join Yuequan Hu, Power Applications Engineer with Wolfspeed, as he demonstrates the application of Wolfspeed’s C3M™ 650 V Silicon Carbide MOSFET Technology in TOLL package to create a 3.6kW bridgeless totem-pole PFC for server power supply, data center power supply, mining power supply, and telecom systems.
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