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E4D20120G

1200 V, 20 A, TO-263-2 package, Automotive qualified, Discrete SiC Schottky Diode
Note Obsolete.
Image that includes both the front and back of the TO-263-2 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
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  • Overview
  • Parametric Data
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Parametric Data

E4D20120G

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E4D20120G

Product SKU
Buy Online
Data Sheet
Blocking Voltage
Current Rating
Generation
Forward Voltage(VF(type))
Maximum Continuous Current (IF)
Total Capacitive Charge (QC (typ))
Total Power Dissipation (PTOT)
Package
Qualification
Status
E4D20120G
1200 V
20 A
Gen 4
1.5 V
20 A
110 nC
250 W
TO-263-2
Automotive
Obsolete

End of Section

Documents, Tools & Support

  • Technical & Sales Documents
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  • Compliance

Documents

Document Type
Document Name
Last Updated
Data Sheets
E4D20120G
11/2023
Application Notes
PRD-05652: Mounting Recommendations and Thermal Measurement for Wolfspeed® SiC Power Devices in Through-Hole Packages
02/2025
Application Notes
PRD-08710: Measuring Stray Inductance in Power Electronics Systems
07/2024
Application Notes
PRD-05653: Recommended Solder Profiles for Power Products
09/2022
Application Notes
Selection Guide of SiC Schottky Diode in CCM PFC Applications
09/2015
Product Catalog
Power Product Line Card
01/2025
Sales Terms
Wolfspeed, Inc. Sales Terms and Conditions
04/2025
Sales Terms
Power Product Packing & Shipping Reference Guide
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs.
03/2025

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Key Testing Considerations for Migrating from Silicon (Si) to Silicon Carbide (SiC) in Power Designs

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