SiC Materials
Materials Products
Delivering quality at scale
As a pioneer in silicon carbide, we are leading the industry’s transition to the 200mm n-type wafers with an intense focus on continuous improvement, unwavering quality and cost reduction. Grounded in our years of experience, our passion and the best technology, we deliver n-type conductive SiC products and a variety of SiC epitaxy options at scale necessary to meet growing demand for higher-performing, more efficient silicon carbide solutions.
We believe in a better, more sustainable future. Together, with the world's leading electronics manufacturers we can make that future real today.
Products
Physical Properties
Polytype | Single-Crystal 4H |
Supported diameters | 150mm & 200mm |
Crystal structure | Hexagonal |
Bandgap | 3.26 eV |
Thermal conductivity (n-type; 0.020 Ω*cm) | a~4.2 W/cm • K @ 298 K c~3.7 W/cm • K @ 298 K |
Thermal conductivity (HPSI) | a~4.9 W/cm • K @ 298 K c~3.9 W/cm • K @ 298 K |
Lattice parameters | a=3.073 Å c=10.053 Å |
Mohs hardness | 9 |
Dimensional Properties, Terminology, & Methods
Diameter | The linear dimension across the surface of the wafer. Measurement is performed using an automated micrometer, traceable to the ANSI standard, providing the average value for each individual wafer. |
Thickness, Center Point | Measured with ANSI-certified non-contact tools at the center of each individual wafer. |
Surface Orientation | Denotes the orientation of the surface of a wafer with respect to a crystallographic plane within the lattice structure. In wafers cut intentionally “off orientation,” the direction of cut is parallel to the primary flat, away from the secondary flat. Measured with x-ray goniometer on a sample of one wafer per boule in the center of the wafer. |
Orthogonal Misorientation | In wafers intentionally cut “off orientation,” the angle between the projection of the surface normal onto a (0001) plane and the nearest [1120] direction. |
Materials Tools & Support
Knowledge Center
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