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Wolfspeed produces GaN, AlxGa1-xN and Al1-y InyN epitaxial layers on SiC substrates. Unless noted otherwise on the product quotation, the epitaxial layer structure will meet or exceed the following specifications (1). Additional comments, terms and conditions may be found in the specification document.

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Nitride Epitaxial Layer Specifications – Structural

PropertyValue or RangePrecisionMeasurement Technique
Substrate SiC (Semi-Insulating) - -
Composition (2) AlxGa1-xN or Al1-y InyN
0 ≤ x ≤ 0.4,
0 ≤ y ≤ 0.2, certain restrictions apply
Δ x = ±0.015, Δ y = ±0.02 XRD peak splitting
Thickness (3) 0.001 μm to 10.0 μm GaN
0.5 nm to 1.0 μm AlN
0.001 μm to 1.0 μm AlxGa1-xN
0.001 μm to 1.0 μm AlyIn1-yN
10.0 nm to 250.0 nm SiN (Cap Layer)
Average thickness within ±15% of target thickness and uniformity <10%. (4) X-ray or white light interferometry
GaN Crystallinity <250 arcsec (3 μm layer on SiC substrate) - XRD (0006) FWHM (center point)
Al0.25Ga0.75N <500 arcsec (3 μm layer on SiC substrate) - XRD (0006) FWHM (center point) (5)
*quaternary compositions avialable upon special request

Nitride Epitaxial Layer Specifications – Electrical

PropertyValue or RangePrecisionMeasurement Technique
Dopant type n-type (Si)
p-type (Mg)
- -
Carrier concentration (unintentionally doped) <1E16 cm-3, n-type - Hg probe CV
Carrier concentration (n-type, Si doped) 1E16 to 2E19 cm-3 ±50% Hg probe CV (wafer center, room temperature)
Carrier concentration (p-type, Mg doped) 5E16 to 5E17 cm-3 (activated) ±50% Hg probe CV (wafer center, room temperature)
Carrier Concentration of HEMT structure >8E12 cm2 (25 nm Al0.25Ga0.75N) - Contactless non-destructive carrier concentration
Mobility of HEMT structure μ ≥ 1600 cm2 V-1 s-1 (25 nm Al0.25Ga0.75N) - Contactless non-destructive mobility
Sheet resistivity <5% uniformity - Contactless non-destructive sheet resistivity


  1. Certain additional restrictions may apply and will be presented on the product quotation.
  2. Quaternary compositions available upon special request.
  3. Range given for undoped layers. Maximum achievable thickness for doped layers or heterostructures will be reduced.
  4. Precision specification applies only to layers ≥0.01 μm thick. Uniformity = (100 x standard deviation / mean).
  5. Please specify epitaxy structure details upon submission of RFQ (i.e. thickness, doping, composition, for each layer).
  6. Custom structures available. Contact Wolfspeed Materials Sales for more information on custom epitaxy requests.