22 kW Bi-Directional CLLC Utilizing IMS Board

CRD-22DD12N-J2

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This reference design demonstrates the application of Wolfspeed’s automotive qualified E3M 1200V SiC MOSFETs in a TO-263-7 (J2) surface mount package to create a 22 kW Bi-Directional High Efficiency DC/DC Converter based on insulated metal substrate (IMS) board for electric vehicle (EV) on-board charger (OBC) and similar applications. The AEC-Q101 compliant E3M™ series MOSFETs are ideally suited for the most challenging on-board applications. This design is intended to work with an active-front-end (AFE) converter that adjusts the input voltage to the DC/DC converter to optimize the system efficiency based on the output (battery) voltage. The range of the DC input is designed to be compatible with both single and three-phase AFE systems while supporting a wide DC output voltage range of 480 V-800 V. A full bridge CLLC resonant converter with a flexible control scheme implements frequency modulation, phase shift control, adaptive synchronous rectification and a bridge reconfiguration technique. The use of 1200V 32mΩ automotive qualified SiC MOSFETs enhance thermal performance and facilitates assembly automation. The use of IMS PCB in this reference design exhibits superior thermal performance.

The design accomplishes

Peak efficiency of 98.6% in both charging and discharging mode
Power density of 9.4 kW/L
Bi-directional operation

This reference design is offered as a comprehensive design package which can be used as a starting point for new designs with SiC power devices.

Specifications

Charging Mode

Input Voltage: 380 V – 900 V DC
Output Voltage: 480 V – 800 V DC Nominal. System capable of 200 V – 800 V DC
At Vin = 650 V – 900 V DC, Output Power: 22 kW; Output current: 36 A
At Vin = 380 V – 900 V DC, Output Power: 6.6 kW; Output current: 26.4 A

Discharging Mode

Input Voltage: 300 V – 800 V DC
Output Voltage: 360 V – 750 V DC Nominal
Output Power: 6.6 kW; Output current: 19 A

Full bridge CLLC resonant converter operating at 135 – 250 kHz
Tooled heatsink to simulate cooling plate
CAN interface

Product Shot of Wolfspeed's Reference Design of a 22 kW Bi-Directional CLLC Utilizing IMS Board

Product Shot of Wolfspeed's Reference Design of a 22 kW Bi-Directional CLLC Utilizing IMS Board

Applications

EV On-Board Charger
EV Fast Charging

What's Included

Reference Design Files for

Main Board
Controller Board
AUX Power Board
Driver Board
HBIMS (Half-Bridge Insulated Metal Substrate) Board

Request Separately

Firmware and GUI
Mechanical Specifications

Product Compatibility

E3M0032120J2

Documents, Tools, & Support

Block Diagram
Technical & Sales Documents
Tools & Support

crd 22dd12n block diagram

crd 22dd12n block diagram

DC-DC Converter

2W Isolated DC-DC Converter Vin=15V, Vout= -3V/15V

DC-DC Converter

2W Isolated DC-DC Converter Vin=15V, Vout= -3V/15V

UCC5350

5A, High Voltage, Isolated Gate Driver with Internal Miller Clamp for Q1, Q2, Q3, Q4, Q7, Q16, Q17, Q18

UCC5350

5A, High Voltage, Isolated Gate Driver with Internal Miller Clamp for Q1, Q2, Q3, Q4, Q7, Q16, Q17, Q18

F2837x C2000 real-time microcontroller

MCU with control algorithms for the AC-DC and DC-DC Stages

Image that includes both the front and back of the J1-TO-263-7 XL package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the J1-TO-263-7 XL package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

E3M0032120J2

Gen 3 Discrete Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode

Image that includes both the front and back of the J1-TO-263-7 XL package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the J1-TO-263-7 XL package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

E3M0032120J2

Gen 3 Discrete Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode

Image that includes both the front and back of the J1-TO-263-7 XL package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the J1-TO-263-7 XL package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

E3M0032120J2

Gen 3 Discrete Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode

Image that includes both the front and back of the J1-TO-263-7 XL package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the J1-TO-263-7 XL package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

E3M0032120J2

Gen 3 Discrete Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode

Image that includes both the front and back of the J1-TO-263-7 XL package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the J1-TO-263-7 XL package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

E3M0032120J2

Gen 3 Discrete Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode

Image that includes both the front and back of the J1-TO-263-7 XL package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the J1-TO-263-7 XL package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

E3M0032120J2

Gen 3 Discrete Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode

Image that includes both the front and back of the J1-TO-263-7 XL package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the J1-TO-263-7 XL package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

E3M0032120J2

Gen 3 Discrete Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode

Image that includes both the front and back of the J1-TO-263-7 XL package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the J1-TO-263-7 XL package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

E3M0032120J2

Gen 3 Discrete Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode

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