Wolfspeed Logo

Main menu navigation

  • Explore Products

    • Power Modules
    • Discrete MOSFETs
    • Discrete Schottky Diodes
    • Bare Die MOSFETs
    • Bare Die Schottky Diodes
    • Reference Designs
    • Gate Driver Boards
    • Evaluation Kits
    • Materials Products
  • Explore Applications

    • Artificial Intelligence

      • Datacenter & Server Power Supplies
      • Uninterruptible Power Supplies
    • Automotive

      • EV Powertrain
      • On-Board Charger
      • On-Board DC/DC Converter
    • E-Mobility

      • Commercial, Construction & Agriculture Vehicles
      • E-Boats and E-Ships
      • Trains & Traction
    • Industrial Motor Drives

      • Low Voltage Motor Drives
      • Heat Pump & Air Conditioning
      • Servo Drives
    • Renewable Energy

      • Energy Storage Systems
      • Fast Charging
      • Residential & Light Commercial Solar Systems
      • Industrial & Commercial Solar Systems
      • Utility Scale Renewable Energy
    • Materials Applications
  • Tools & Support
  • Explore Company

    • About
    • Locations
    • Senior Leadership
    • Powerful Perspectives
    • Quality
    • Sustainability
    • News
    • Events
  • Careers
  • Investors
  • English
  • 简体中文 - Chinese (Simplified)
  • 繁體中文 - Chinese (Traditional)
Contact
    View Cart

    Breadcrumb Navigation

    • Home
    • Products
    • Power
    • Reference Designs
    • 22 kW Bi-Directional CLLC Utilizing IMS Board

    22 kW Bi-Directional CLLC Utilizing IMS Board

    CRD-22DD12N-J2
    Download Design Files

    This reference design demonstrates the application of Wolfspeed’s automotive qualified E3M 1200V SiC MOSFETs in a TO-263-7 (J2) surface mount package to create a 22 kW Bi-Directional High Efficiency DC/DC Converter based on insulated metal substrate (IMS) board for electric vehicle (EV) on-board charger (OBC) and similar applications. The AEC-Q101 compliant E3M™ series MOSFETs are ideally suited for the most challenging on-board applications. This design is intended to work with an active-front-end (AFE) converter that adjusts the input voltage to the DC/DC converter to optimize the system efficiency based on the output (battery) voltage. The range of the DC input is designed to be compatible with both single and three-phase AFE systems while supporting a wide DC output voltage range of 480 V-800 V. A full bridge CLLC resonant converter with a flexible control scheme implements frequency modulation, phase shift control, adaptive synchronous rectification and a bridge reconfiguration technique. The use of 1200V 32mΩ automotive qualified SiC MOSFETs enhance thermal performance and facilitates assembly automation. The use of IMS PCB in this reference design exhibits superior thermal performance.

    The design accomplishes

    • Peak efficiency of 98.6% in both charging and discharging mode
    • Power density of 9.4 kW/L
    • Bi-directional operation

    This reference design is offered as a comprehensive design package which can be used as a starting point for new designs with SiC power devices.

    Specifications

    Charging Mode

    • Input Voltage: 380 V – 900 V DC
    • Output Voltage: 480 V – 800 V DC Nominal. System capable of 200 V – 800 V DC
    • At Vin = 650 V – 900 V DC, Output Power: 22 kW; Output current: 36 A
    • At Vin = 380 V – 900 V DC, Output Power: 6.6 kW; Output current: 26.4 A

    Discharging Mode

    • Input Voltage: 300 V – 800 V DC
    • Output Voltage: 360 V – 750 V DC Nominal
    • Output Power: 6.6 kW; Output current: 19 A

    Full bridge CLLC resonant converter operating at 135 – 250 kHz
    Tooled heatsink to simulate cooling plate
    CAN interface

    Product Shot of Wolfspeed's Reference Design of a 22 kW Bi-Directional CLLC Utilizing IMS Board

    Knowledge Center

    View All

    Engineering for Outcomes:
    Three Ways Wolfspeed Gen 5 Achieves Real-World Performance

    Wolfspeed's Gen 5 SiC MOSFETs are engineered for real-world performance — not just ideal conditions. Built on optimized planar MOSFET design, Gen 5 achieves better RDS(ON) through tightened epitaxy, increased active area, and enhanced soft body diode technology. The result: lower losses, higher reliability, and greater design confidence for automotive and industrial applications.
    Continue Reading Thought Leadership

    Designer’s Guide for SiC – A Paradigm Shift in the Way Energy is Generated, Stored, Converted, and Used

    Register Now Webinars

    A New Foundation for Critical Power Conversion

    As AI scales, a greater lens is on the upstream power sources that are expected to keep up with rapidly expanding data center deployments. Amperesand is helping build the cornerstone of tomorrow’s grid by developing highly reliable, medium voltage (MV) SiC-based solid state transformers. Read more to learn how Amperesand and Wolfspeed partnered to make it happen.
    Continue Reading Case Study

    Footer

    Wolfspeed Logo

    Social Media

    • Instagram
    • X
    • LinkedIn
    • YouTube

    Footer Navigation

    • Contact
    • Where to Buy
    • Intellectual Property
    • Suppliers & Contractors

    Legal

    • Privacy Policy
    • Cookie Policy
    • Terms Of Use
    • Accessibility
    Copyright © 2026 Wolfspeed, Inc.

    Applications

    • EV On-Board Charger
    • EV Fast Charging

    What's Included

    Reference Design Files for

    • Main Board
    • Controller Board
    • AUX Power Board
    • Driver Board
    • HBIMS (Half-Bridge Insulated Metal Substrate) Board

    Request Separately

    • Mechanical Specifications

    Product Compatibility

    • E3M0032120J2

    Documents, Tools & Support

    • Block Diagram
    • Technical & Sales Documents
    • Tools & Support
    crd 22dd12n block diagram
    DC-DC Converter

    2W Isolated DC-DC Converter Vin=15V, Vout= -3V/15V

    DC-DC Converter

    2W Isolated DC-DC Converter Vin=15V, Vout= -3V/15V

    UCC5350

    5A, High Voltage, Isolated Gate Driver with Internal Miller Clamp for Q1, Q2, Q3, Q4, Q7, Q16, Q17, Q18

    View Product
    UCC5350

    5A, High Voltage, Isolated Gate Driver with Internal Miller Clamp for Q1, Q2, Q3, Q4, Q7, Q16, Q17, Q18

    View Product
    F2837x C2000 real-time microcontroller

    MCU with control algorithms for the AC-DC and DC-DC Stages

    View Product
    Image that includes both the front and back of the J1-TO-263-7 XL package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
    E3M0032120J2

    Gen 3 Discrete Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode

    View Product
    Image that includes both the front and back of the J1-TO-263-7 XL package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
    E3M0032120J2

    Gen 3 Discrete Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode

    View Product
    Image that includes both the front and back of the J1-TO-263-7 XL package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
    E3M0032120J2

    Gen 3 Discrete Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode

    View Product
    Image that includes both the front and back of the J1-TO-263-7 XL package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
    E3M0032120J2

    Gen 3 Discrete Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode

    View Product
    Image that includes both the front and back of the J1-TO-263-7 XL package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
    E3M0032120J2

    Gen 3 Discrete Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode

    View Product
    Image that includes both the front and back of the J1-TO-263-7 XL package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
    E3M0032120J2

    Gen 3 Discrete Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode

    View Product
    Image that includes both the front and back of the J1-TO-263-7 XL package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
    E3M0032120J2

    Gen 3 Discrete Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode

    View Product
    Image that includes both the front and back of the J1-TO-263-7 XL package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
    E3M0032120J2

    Gen 3 Discrete Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode

    View Product

    Support

    Technical SupportPower Applications Forum
    Buy OnlineFind a Distributor
    Request SamplesVisit the Sample Center