60 kW Interleaved Boost Converter

CRD-60DD12N

This reference design demonstrates the application of Wolfspeed’s C3M™ Silicon Carbide MOSFETs in a 4-phase interleaved boost converter. This topology is ideal for high efficiency solar power generation systems to boost the output voltage of the solar panel to a consistent DC bus voltage, which can be fed into a grid-tied inverter. The design uses parallel Silicon Carbide MOSFETs and parallel Silicon Carbide Schottky diodes to achieve a high-power density using discrete devices. The TO-247-4 package with a Kelvin source pin enables high frequency switching with reduced losses compared to 3-lead devices.

Product Shot of Wolfspeed's Reference Design of a 60 kW Interleaved Boost Converter

Product Shot of Wolfspeed's Reference Design of a 60 kW Interleaved Boost Converter

Specifications

Input Voltage: 470-800V DC
Output Voltage: 850V DC
Power Max: 60 kW
Switching Frequency: 78kHz
Peak Efficiency: 99.5%
Power Density: 127W/in³

Applications

Solar boost converter

What's Included

Complete design files including schematic, PCB layout and BOM

Product Compatibility

Documents, Tools & Support

Block Diagram
Technical & Sales Documents
Tools & Support

Block diagram for CRD-60DD12N

Block diagram for CRD-60DD12N

Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.

Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.

E4D20120D

1200 V Discrete Silicon Carbide Schottky Diodes

Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.

Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.

E4D20120D

1200 V Discrete Silicon Carbide Schottky Diodes

Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.

Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.

E4D20120D

1200 V Discrete Silicon Carbide Schottky Diodes

Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.

Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.

E4D20120D

1200 V Discrete Silicon Carbide Schottky Diodes

Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.

Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.

C4D10120D

Silicon Carbide 1200 V Schottky Diode

Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.

Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.

C4D10120D

Silicon Carbide 1200 V Schottky Diode

Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.

Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.

C4D10120D

Silicon Carbide 1200 V Schottky Diode

Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.

Angled product photo of the front and back of the TO-247-3 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.

C4D10120D

Silicon Carbide 1200 V Schottky Diode

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

E3M0075120K

E-Series Automotive-Qualified Silicon Carbide MOSFETs

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

E3M0075120K

E-Series Automotive-Qualified Silicon Carbide MOSFETs

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

E3M0075120K

E-Series Automotive-Qualified Silicon Carbide MOSFETs

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

E3M0075120K

E-Series Automotive-Qualified Silicon Carbide MOSFETs

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

C3M0075120

Silicon Carbide Power 1200 V MOSFET

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

C3M0075120

Silicon Carbide Power 1200 V MOSFET

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

C3M0075120

Silicon Carbide Power 1200 V MOSFET

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

C3M0075120

Silicon Carbide Power 1200 V MOSFET

Knowledge Center

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