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30kW Discrete Interleaved LLC DC-DC Converter

CRD30DD12N-K Product Shot
CRD30DD12N-K

The 30kW 3 phase interleaved LLC DCDC converter (CRD30DD12N-K) targets high-power-density, high-efficiency fast charger applications and features Wolfspeed’s discrete 1200V C3M Silicon Carbide MOSFETs (C3M0040120K) and 650V C6D Silicon Carbide Schottky Diodes (C6D20065D and C6D10065A). A 3-phase interleaved LLC topology is implemented to provide low input current ripple and high efficiency for EV high power fast charger. Discrete power devices offer cost effective and common package solutions. The reference design accommodates all different levels of EV charging with a wide output voltage range of 200V-1000V while maintaining a high power density of 6.5kW/L and higher than 98% peak efficiency. The adaptive control operates over a 130kHz-250kHz switching frequency range to maintain optimal control over all operating conditions. The secondary side of the converter is manually configurable for series or parallel operation depending on the output voltage range required.

The design accomplishes:

  • Peak efficiencies over 98.3%
  • Power density of 6.5kW/L

This reference design is offered as a comprehensive design package which can be used as a starting point for new SiC designs.

Parallel Output Configuration

  • Input Voltage: 650V-850V DC
  • Output Voltage:
    • 200V-250V DC, 66A max
    • 250V-500V DC, 100A max, 30kW max

Series Output Configuration

  • Input Voltage: 650V-850V DC
  • Output Voltage:
    • 500V-1000V DC, 50A max, 30kW max
  • Switching Frequency: 130-250kHz
  • Extruded heatsink with forced air cooling
  • CAN interface with PC based graphical user interface
Applications
  • EV Fast Charging
  • HVDC
  • Enterprise server / telecom
  • Industrial power supplies
What's Included

Reference Design Files for:

  • Main board
  • Controller Board
Request Separately
  • Mechanical Specifications
CRD30DD12N-K Block Diagram
C3M0040120K

Silicon Carbide Power 1200V MOSFET C3M™ Planar MOSFET Technology N-Channel Enhancement Mode

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C3M0040120K

Silicon Carbide Power 1200V MOSFET C3M™ Planar MOSFET Technology N-Channel Enhancement Mode

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C3M0040120K

Silicon Carbide Power 1200V MOSFET C3M™ Planar MOSFET Technology N-Channel Enhancement Mode

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C3M0040120K

Silicon Carbide Power 1200V MOSFET C3M™ Planar MOSFET Technology N-Channel Enhancement Mode

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C3M0040120K

Silicon Carbide Power 1200V MOSFET C3M™ Planar MOSFET Technology N-Channel Enhancement Mode

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C3M0040120K

Silicon Carbide Power 1200V MOSFET C3M™ Planar MOSFET Technology N-Channel Enhancement Mode

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C6D20065D

Dual Silicon Carbide 650V Schottky Diode

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C6D20065D

Dual Silicon Carbide 650V Schottky Diode

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C6D20065D

Dual Silicon Carbide 650V Schottky Diode

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C6D20065D

Dual Silicon Carbide 650V Schottky Diode

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C6D20065D

Dual Silicon Carbide 650V Schottky Diode

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C6D20065D

Dual Silicon Carbide 650V Schottky Diode

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C6D10065A

Silicon Carbide 650V Schottky Diode

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C6D10065A

Silicon Carbide 650V Schottky Diode

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C6D10065A

Silicon Carbide 650V Schottky Diode

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C6D10065A

Silicon Carbide 650V Schottky Diode

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C6D10065A

Silicon Carbide 650V Schottky Diode

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C6D10065A

Silicon Carbide 650V Schottky Diode

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C6D10065A

Silicon Carbide 650V Schottky Diode

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C6D10065A

Silicon Carbide 650V Schottky Diode

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C6D10065A

Silicon Carbide 650V Schottky Diode

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C6D10065A

Silicon Carbide 650V Schottky Diode

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C6D10065A

Silicon Carbide 650V Schottky Diode

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C6D10065A

Silicon Carbide 650V Schottky Diode

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