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  • 1200 V Bare Die Silicon Carbide MOSFETs – Gen 4
  • CPM4-0120-0149JS0A

CPM4-0120-0149JS0A

1200 V, 26 mΩ, Gen 4, Industrial qualified, Bare Die SiC MOSFET
Download Data Sheet
Product rendering of three Wolfspeed Silicon Carbide Bare Die MOSFETs.
  • Overview
  • Parametric Data
  • Order Details
  • Product Details
  • Tools & Support
  • Overview
  • Parametric Data
  • Order Details
  • Product Details
  • Tools & Support

Parametric Data

Display All SKUs in Product Family (3)

1200 V Bare Die Silicon Carbide MOSFETs – Gen 4

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1200 V Bare Die Silicon Carbide MOSFETs – Gen 4

Product SKU
Buy Online
Data Sheet
Status
Blocking Voltage
RDS(ON) at 25°C
Current Rating
Gate Charge Total
Output Capacitance
Reverse Recovery Charge (Qrr)
Reverse Recovery Time (Trr)
Tjmax
Generation
Qualification
CPM4-0120-0149JS0A
Active
1200 V
26 mΩ
90 A
136 nC
110 pF
590 nC
56 ns
175 °C
Gen 4
Industrial

End of Section

Ordering & Compliance

CPM4-0120-0149JS0A Ordering

Part Number
CPM4-0120-0149JS0A
Order StatusActive
Buy Online
Container TypeAvailable in Film Frame and Tape & Reel

CPM4-0120-0149JS0A Compliance

Halogen FreeYes
Lead FreeYes
RoHS Declaration
Download
REACH Declaration
Download
California Prop 65Learn More
ECCN
EAR99

Product Details

Features

  • 4th Generation SiC MOSFET
  • High blocking voltage with low on-resistance
  • High speed switching with low capacitance
  • Soft body diode with low reverse recovery
  • Low conduction losses over temperature

Benefits

  • Improves system efficiency with lower switching loss
  • Reduces system size, weight, and cooling requirements
  • Increased power density
  • Easy to parallel and compatible with standard gate drive design

Typical Applications

  • Renewable energy inverters
  • High voltage DC/DC converters
  • Off-board chargers
  • Motor drives

Documents, Tools & Support

Display All SKUs in Product Family (3)
  • Technical & Sales Documents
  • Tools & Support
  • Compliance

Documents

Document Type
Document Name
Last Updated
Data Sheets
CPM4-0120-0149JS0A
01/2024
Application Notes
PRD-04814: Design Options for Wolfspeed® Silicon Carbide MOSFET Gate Bias Power Supplies
01/2025
Application Notes
PRD-08937: Impact of VGS on SiC MOSFET Characteristics
New
01/2025
Application Notes
PRD-08296: SiC MOSFET Short Circuit Events
11/2023
Application Notes
PRD-06933: Capacitance Ratio and Parasitic Turn-on
01/2023
White Papers
Gen 4 Silicon Carbide Technology: Redefining Performance and Durability in High-Power Applications
New
01/2025
Product Catalog
Power Product Line Card
01/2025
Sales Sheets & Flyers
Wolfspeed Silicon Carbide Solutions for EV Inverters
03/2022
Sales Terms
Wolfspeed, Inc. Sales Terms and Conditions
04/2025
Sales Terms
Power Product Packing & Shipping Reference Guide
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs.
03/2025

Knowledge Center

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Design Resources

Key Testing Considerations for Migrating from Silicon (Si) to Silicon Carbide (SiC) in Power Designs

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Breaking the Mold: Redefining What’s Possible Through Product Engineering  

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