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    • Bare Die Silicon Carbide MOSFETs
    • 1200 V Bare Die Silicon Carbide MOSFETs – Gen 3
    • CPM3-1200-0016A

    CPM3-1200-0016A

    1200 V, 16 mΩ, Gen 3, Industrial qualified, Bare Die SiC MOSFET
    Download Data Sheet
    Product rendering of three Wolfspeed Silicon Carbide Bare Die MOSFETs.
    • Overview
    • Parametric Data
    • Order Details
    • Product Details
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    • Overview
    • Parametric Data
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    Parametric Data

    Display All SKUs in Product Family (5)
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    Product SKU
    Buy Online
    Data Sheet
    Status
    Blocking Voltage
    RDS(ON) at 25°C
    Current Rating
    Gate Charge Total
    Output Capacitance
    Reverse Recovery Charge (Qrr)
    Reverse Recovery Time (Trr)
    Tjmax
    Generation
    Qualification
    CPM3-1200-0016A

    Purchase CPM3-1200-0016A
    Create a BOM or add to cart on arrow.com

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    Active
    1200 V
    16 mΩ
    112 A
    227 nC
    230 pF
    1238 nC
    30 ns
    175 °C
    Gen 3
    Industrial

    Knowledge Center

    View All

    Beyond Silicon’s Limits:
    How High‑Voltage Silicon Carbide is Redefining Critical Power

    Continue Reading  Thought Leadership

    Wolfspeed’s 300 mm Silicon Carbide Technology as a Materials Foundation for Next-Generation AI and HPC Advanced Packaging

    Continue Reading  Technical Articles

    Answering the call:
    Powering AI with reliable silicon carbide-based solid-state transformers

    Continue Reading  White Paper

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    Ordering & Compliance

    CPM3-1200-0016A Ordering

    Part Number
    CPM3-1200-0016A
    Order Status
    Active
    Buy Online
    Container Type
    Available in Film Frame and Tape & Reel

    CPM3-1200-0016A Compliance

    Halogen Free
    Yes
    Lead Free
    Yes
    RoHS Declaration
    Download
    REACH Declaration
    Download
    California Prop 65
    Learn More
    ECCN
    EAR99

    Product Details

    Features

    • High blocking voltage with industry leading low RDS(on) over temperature stability
    • Fast intrinsic diode with low reverse recovery charge (Qrr)
    • High-speed switching with low output capacitance
    • Low conduction losses over temperature
    • Avalanche ruggedness

    Benefits

    • Improves system efficiency with lower switching loss
    • Reduces system size; weight; and cooling requirements
    • Increased power density
    • Easy to parallel and compatible with standard gate drive design

    Typical Applications

    • Solid State Circuit Breakers
    • Renewable Energy Inverters
    • High voltage DC/DC converters
    • Switch-Mode Power Supplies
    • Uninterruptible Power Supplies (UPS)
    • High Performance Welding Power Supplies
    • Auxiliary power supplies for High Voltage Systems

    Documents, Tools & Support

    • Technical & Sales Documents
    • Tools & Support
    • Compliance

    Documents

    11 Documents Available
    Document Type
    Document Name
    Last Updated
    Data Sheets
    CPM3-1200-0016A External Version (PDF)
    07/2024
    Application Notes
    PRD-09129: Mitigating Package Induced Failures (PDF)
    05/2025
    Application Notes
    PRD-04814: Design Options for Wolfspeed® Silicon Carbide MOSFET Gate Bias Power Supplies (PDF)
    01/2025
    Application Notes
    PRD-08937: Impact of VGS on SiC MOSFET Characteristics (PDF)
    11/2024
    Application Notes
    PRD-08296: SiC MOSFET Short Circuit Events (PDF)
    11/2023
    Application Notes
    PRD-06933: Capacitance Ratio and Parasitic Turn-on (PDF)
    01/2023
    White Papers
    Designed to Last, Even in the Harshest Environments (PDF)
    New
    11/2025
    White Papers
    Enhancing System Durability with Advanced Packaging for Silicon Carbide (PDF)
    11/2025
    White Papers
    SiC Power Module Reliability: Wolfspeed’s Power Cycling and Lifetime Modeling Approach (PDF)
    New
    11/2025
    Sales Terms
    Wolfspeed, Inc. Sales Terms and Conditions (PDF)
    04/2025
    Product Catalog
    Power Product Line Card (PDF)
    01/2025

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