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  • 3300 V Bare Die Silicon Carbide MOSFETs

3300 V Bare Die Silicon Carbide MOSFETs

Wolfspeed's 3300 V bare die silicon carbide MOSFETs offer high reliability and ruggedness for high power applications.
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The MOSFETs enable greater system efficiency and smaller, more power dense systems optimized for use in heavy duty equipment, industrial uninterruptible power supply (UPS) systems, industrial motor drives, and more.
Wolfspeed CPM3-3300-R050A Silicon Carbide MOSFET Gen 3
  • Overview
  • Parametric Data
  • Product Details
  • Video
  • Documents, Tools & Support
  • Overview
  • Parametric Data
  • Product Details
  • Video
  • Documents, Tools & Support

Parametric Data

3300 V Bare Die Silicon Carbide MOSFETs

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3300 V Bare Die Silicon Carbide MOSFETs

Product SKU
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Data Sheet
Status
Blocking Voltage
RDS(ON) at 25°C
Current Rating
Gate Charge Total
Output Capacitance
Reverse Recovery Charge (Qrr)
Reverse Recovery Time (Trr)
Tjmax
Generation
Qualification
CPM3-3300-R050A
Active
3300 V
53 mΩ
52 A
255 nC
140 pF
2.5 nC
124 ns
175 °C
Gen 3
Industrial

End of Section

Product Details

Features

  • Low RDS(on)
  • Avalanche Ruggedness
  • Easy to Parallel and Simple to Drive
  • Temperature-Independent High-Speed Switching

Benefits

  • Increased switching speed and efficiency compared to Si IGBTs
  • Intrinsic body diode reduces BOM components
  • High temperature operation, -55º C to 175º C
  • Enhanced reliability

Typical Applications

  • Heavy-duty industrial e-mobility (transportation, construction, agricultural, mining, and logging vehicles)
  • Ultra-fast DC chargers
  • Industrial motor drives
  • Industrial uninterruptible power supply (UPS) systems
  • Marine & aerospace propulsion
  • Terrestrial power distribution systems
  • High voltage direct current (HVDC) and flexible AC transmission system (FACTS) controllers

Tools & Support

  • Technical & Sales Documents
  • Tools & Support
  • Compliance

Documents

8 Documents Available
Document Type
Document Name
Last Updated
Application Notes
PRD-09129: Mitigating Package Induced Failures
New
05/2025
Application Notes
PRD-04814: Design Options for Wolfspeed® Silicon Carbide MOSFET Gate Bias Power Supplies
01/2025
Application Notes
PRD-08937: Impact of VGS on SiC MOSFET Characteristics
New
01/2025
Application Notes
PRD-08296: SiC MOSFET Short Circuit Events
11/2023
Application Notes
PRD-06933: Capacitance Ratio and Parasitic Turn-on
01/2023
Product Catalog
Power Product Line Card
01/2025
Sales Sheets & Flyers
3300 V LM SiC Half-Bridge Power Modules Product Brief
06/2024
Sales Terms
Wolfspeed, Inc. Sales Terms and Conditions
04/2025

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Design Resources

Key Testing Considerations for Migrating from Silicon (Si) to Silicon Carbide (SiC) in Power Designs

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Partnering for Maximum Impact: An Interview with Paul Wheeler

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Breaking the Mold: Redefining What’s Possible Through Product Engineering  

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