Features
- 1200-Volt Schottky Rectifier
- Zero Forward and Reverse Recovery
- High-Frequency Operation
- Temperature-Independent Switching Behavior
- Extremely Fast Switching
- Positive temperature coefficient on VF
1200 V Bare Die Silicon Carbide Schottky Diodes – Gen 6
CPW6-1200-Z050A
1200 V; 50 A; Gen 6 Bare Die Silicon Carbide (SiC) Schottky Diode
Wolfspeed’s Gen 6 family of high voltage, high performance Z-Rec© Silicon Carbide (SiC) Schottky diodes in a packageless bare die format to be implemented into any custom module design. The lower forward voltage, smaller reverse leakage current, zero reverse recovery, and high thermal conductivity make this Schottky diode ideal for high frequency switching applications.
Products
1200 V Bare Die Silicon Carbide Schottky Diodes – Gen 6
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1200 V Bare Die Silicon Carbide Schottky Diodes – Gen 6
Product SKU | Buy Online | Data Sheet | Qualification | Blocking Voltage | Current Rating | Total Capacitive Charge (QC (typ)) | Maximum Junction Temperature | Generation | Recommended For New Design? |
|---|---|---|---|---|---|---|---|---|---|
CPW6-1200-Z050A | Industrial | 1200 V | 50 A | 279 nC | 175 °C | Gen 6 | Yes |
Product Details
Benefits
- Reduces system size, weight, and cooling requirements
- Increased power density
- Improved system efficiency at high switching frequencies
- Parallel mode operation possible
Applications
- Fast EV charging
- Commercial vehicles
- Solar systems Power Converters
- Switch Mode Power Supplies (SMPS)
- Uninterruptible Power Supplies (UPS)
- Motor Drives
Documents, Tools & Support
- Technical & Sales Documents
- Tools & Support
- Compliance
Documents
Document Type | Document Name |
|---|---|
| Sales Terms | This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
|
| Sales Terms |
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Virtual Seminar
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