Wolfspeed's Gen 5 SiC MOSFETs are engineered for real-world performance — not just ideal conditions. Built on optimized planar MOSFET design, Gen 5 achieves better RDS(ON) through tightened epitaxy, increased active area, and enhanced soft body diode technology. The result: lower losses, higher reliability, and greater design confidence for automotive and industrial applications.
裸芯片碳化硅肖特基二极管
将封装定制扩展到 650 V 或 1200 V 系统，使用 Wolfspeed 碳化硅裸芯片肖特基二极管，其采用混合 Pin 肖特基 (MPS) 设计，可实现更强的浪涌能力。
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产品SKU | 在线购买 | 数据手册 | Status | 认证 | 阻断电压 | 额定电流 | 总电容电荷 (QC (typ)) | 最高结点温度 | 代际 |
|---|---|---|---|---|---|---|---|---|---|
Active | Industrial | 1200 V | 10 A | 42 nC | 175 °C | Gen 6 | |||
Active | Industrial | 1200 V | 15 A | 90 nC | 175 °C | Gen 6 | |||
Active | Industrial | 1200 V | 20 A | 119 nC | 175 °C | Gen 6 | |||
Active | Industrial | 1200 V | 5 A | 38 nC | 175 °C | Gen 6 | |||
Active | Industrial | 1200 V | 50 A | 279 nC | 175 °C | Gen 6 | |||
Active | Industrial | 1700 V | 10 A | 126 nC | 175 °C | Gen 6 | |||
Active | Industrial | 1700 V | 25 A | 325 nC | 175 °C | Gen 6 | |||
Active | Industrial | 1700 V | 50 A | 479 nC | 175 °C | Gen 6 |
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知识中心
随着人工智能规模的不断扩展，人们越来越关注上游电力资源能否跟上快速扩张的数据中心部署需求。Amperesand 正通过开发高可靠性、中电压、碳化硅基固态变压器，助力构建未来电网的基石。阅读更多内容，了解 Amperesand 与 Wolfspeed 如何携手实现这一目标。