C2M0080120D
1200 V, 80 mΩ, TO-247-3 package, Industrial qualified, Discrete SiC MOSFET
Note Obsolete. Recommended replacement:C3M0075120D
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Documents
20 Documents Available
Document Type | Document Name | Last Updated |
|---|---|---|
| Data Sheets | 10/2024 | |
| Design Resource | 10/2024 | |
| Application Notes | 02/2025 | |
| Application Notes | 01/2025 | |
| Application Notes | 01/2025 | |
| Application Notes | 09/2024 | |
| Application Notes | 07/2024 | |
| Application Notes | 01/2024 | |
| Application Notes | 12/2023 | |
| Application Notes | 11/2023 | |
| Application Notes | 01/2023 | |
| Application Notes | 09/2022 | |
| Application Notes | 02/2022 | |
| Test Report | 03/2022 | |
| White Papers | 11/2024 | |
| Product Catalog | 01/2025 | |
| Sales Sheets & Flyers | 06/2023 | |
| Sales Sheets & Flyers | 03/2022 | |
| Sales Terms | 04/2025 | |
| Sales Terms | Power Product Packing & Shipping Reference Guide This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs.
| 03/2025 |
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Inspiration to Beat Hesitation: 5 Reasons Silicon Carbide is an Unstoppable Force
Silicon carbide plays a role in the entire consumer and industrial supply chain, from turning wheels on roads to powering the chips in our data centers and the heat pumps in our homes.