C3M0025065J1

650 V, 25 mΩ, TO-263-7 XL package, Industrial qualified, Discrete SiC MOSFET

Image that includes both the front and back of the J1-TO-263-7 XL package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Parametric Data

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Product SKU	Buy Online	Request Sample	Data Sheet	CAD Model	Status	Blocking Voltage	R_DS(ON) at 25°C	Current Rating	T_jmax	Package	Qualification
C3M0025065J1					Active	650 V	25 mΩ	80 A	175 °C	TO-263-7 XL	Industrial

Ordering & Compliance

C3M0025065J1 Ordering

Part Number	C3M0025065J1	C3M0025065J1-TR
Order Status	Active	Active
Buy Online
Request Sample	Available	Available
Package	TO-263-7 XL	TO-263-7 XL T&R
Container Type	Tube	Tape & Reel
Container Qty.	50	800
Standard Packing Qty.	1000	800
Minimum Order Qty.	1000	800

C3M0025065J1 Compliance

Halogen Free	Yes
RoHS Declaration	Download
REACH Declaration	Download
California Prop 65	Learn More
ECCN	EAR99
Moisture Sensitivity Level	MSL 2

C3M0025065J1 Related Documents

Soldering & Handling	PRD-05653: Recommended Solder Profiles for Power Products
Packing & Shipping	Power Product Packing & Shipping Reference Guide

Product Details

Features

Low On-State Resistance over Temperature
Low Parasitic Capacitances
Fast Diode with ultra low reverse recovery
High Temperature Operation (TJ = 175°C)
Kelvin Source Pin
Industry Standard Through-Hole & SMT Packages
Small form factor
Low lead inductance
Low Thermal Impedance

Benefits

Improves System Efficiency with lower switching and conduction losses
Enables high switching frequency operation
Improves System Level Power Density
Reduces System Size; Weight; and Cooling Requirements
Enables new hard switching topologies (Totem-Pole PFC)

Typical Applications

Industrial Power Supplies
Server/Telecom
EV-Charging Systems
Energy Storage Systems (ESS)
Uninterruptible Power Supplies (UPS)
Battery Management Systems (BMS)

Featured Resources

Documents, Tools & Support

Technical & Sales Documents
Tools & Support
Compliance

Documents

20 Documents Available

Document Type	Document Name	Last Updated
Data Sheets	C3M0025065J1	12/2024
Application Notes	PRD-05652: Mounting Recommendations and Thermal Measurement for Wolfspeed® SiC Power Devices in Through-Hole Packages	02/2025
Application Notes	PRD-04814: Design Options for Wolfspeed® Silicon Carbide MOSFET Gate Bias Power Supplies	01/2025
Application Notes	PRD-08999: Turn-Off Gate Voltage Considerations for SiC MOSFETs	12/2024
Application Notes	PRD-06752: PCB Layout Techniques for Discrete SiC MOSFETs	09/2024
Application Notes	PRD-08710: Measuring Stray Inductance in Power Electronics Systems	07/2024
Application Notes	PRD-03043: Measuring Switching and Conduction Losses in LTspice® Simulation Software	01/2024
Application Notes	PRD-06701: Thermal Management of Bottom-Side Cooled Surface-Mount Devices & Design Considerations	12/2023
Application Notes	PRD-08296: SiC MOSFET Short Circuit Events	11/2023
Application Notes	PRD-06933: Capacitance Ratio and Parasitic Turn-on	01/2023
Application Notes	PRD-05653: Recommended Solder Profiles for Power Products	09/2022
Application Notes	PRD-05641: Designing with Silicon Carbide in Energy Storage Applications	02/2022
Application Notes	PRD-02441: Design Options for Wolfspeed® Silicon Carbide MOSFET Gate Bias Power Supplies	11/2021
Test Report	PRD-00409: Driving Wolfspeed C3M SiC MOSFETs with Analog Devices ADuM4121	01/2024
Test Report	PRD-02344: SiC MOSFET Short-Circuit Protection Using Skyworks™ Si828x Gate Driver	03/2022
White Papers	Driving Industrial E-Mobility With Silicon Carbide Semiconductors	11/2024
Product Catalog	Power Product Line Card	01/2025
Sales Sheets & Flyers	Wolfspeed® 650 V Silicon Carbide MOSFET In Compact TOLL (TO-LEADLESS) Package	10/2022
Sales Terms	Wolfspeed, Inc. Sales Terms and Conditions	04/2025
Packing & Shipping	Power Product Packing & Shipping Reference Guide This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs.	03/2025