Wolfspeed's Gen 5 SiC MOSFETs are engineered for real-world performance — not just ideal conditions. Built on optimized planar MOSFET design, Gen 5 achieves better RDS(ON) through tightened epitaxy, increased active area, and enhanced soft body diode technology. The result: lower losses, higher reliability, and greater design confidence for automotive and industrial applications.
ECB2R1M12YM3
1200 V, 2.1 mΩ, YM3, Six-Pack (three-phase), Automotive Qualified, Silicon Carbide (SiC) Power Module with Direct-Cooled Pin Fin Baseplate
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Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Status | Package | Configuration | Blocking Voltage | Current Rating | RDS(ON) at 25°C | Tjmin | Tjmax | Module Size | Generation | Qualification | View Product |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ECB2R1M12YM3 | Active | Y | Six-pack (three-phase) | 1200 V | 600 A | 2.1 mΩ | -40 °C | 175 °C | 154.5 x 126.5 x 32 mm | Gen 3 | Automotive | |
Knowledge Center
As AI scales, a greater lens is on the upstream power sources that are expected to keep up with rapidly expanding data center deployments. Amperesand is helping build the cornerstone of tomorrow’s grid by developing highly reliable, medium voltage (MV) SiC-based solid state transformers. Read more to learn how Amperesand and Wolfspeed partnered to make it happen.