Wolfspeed's Gen 5 SiC MOSFETs are engineered for real-world performance — not just ideal conditions. Built on optimized planar MOSFET design, Gen 5 achieves better RDS(ON) through tightened epitaxy, increased active area, and enhanced soft body diode technology. The result: lower losses, higher reliability, and greater design confidence for automotive and industrial applications.
1200 V Bare Die Silicon Carbide Schottky Diodes – Gen 6
Wolfspeed’s Gen 6 Family of 1200 V Silicon Carbide Schottky Diodes
Wolfspeed's Gen 6 family of high voltage, high performance Z-Rec© Silicon Carbide (SiC) Schottky diodes in a packageless bare die format to be implemented into any custom module design. The lower forward voltage, smaller reverse leakage current, zero reverse recovery, and high thermal conductivity make this Schottky diode ideal for high frequency switching applications.
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Product SKU | Buy Online | Data Sheet | Status | Qualification | Blocking Voltage | Current Rating | Total Capacitive Charge (QC (typ)) | Tjmax | Generation |
|---|---|---|---|---|---|---|---|---|---|
Active | Industrial | 1200 V | 5 A | 38 nC | 175 °C | Gen 6 | |||
Active | Industrial | 1200 V | 10 A | 42 nC | 175 °C | Gen 6 | |||
Active | Industrial | 1200 V | 15 A | 90 nC | 175 °C | Gen 6 | |||
Active | Industrial | 1200 V | 20 A | 119 nC | 175 °C | Gen 6 | |||
Active | Industrial | 1200 V | 50 A | 279 nC | 175 °C | Gen 6 |