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1200 V Bare Die Silicon Carbide Schottky Diodes – Gen 6

Wolfspeed’s Gen 6 Family of 1200 V Silicon Carbide Schottky Diodes
Wolfspeed's Gen 6 family of high voltage, high performance Z-Rec© Silicon Carbide (SiC) Schottky diodes in a packageless bare die format to be implemented into any custom module design. The lower forward voltage, smaller reverse leakage current, zero reverse recovery, and high thermal conductivity make this Schottky diode ideal for high frequency switching applications.

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1200 V Bare Die Silicon Carbide Schottky Diodes – Gen 6

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1200 V Bare Die Silicon Carbide Schottky Diodes – Gen 6

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Data Sheet
Qualification
Blocking Voltage
Current Rating
Total Capacitive Charge (QC (typ))
Maximum Junction Temperature
Generation
Recommended For New Design?
CPW6-1200-Z050A
Industrial
1200 V
50 A
279 nC
175 °C
Gen 6
Yes

Product Details

Features
  • 1200-Volt Schottky Rectifier
  • Zero Forward and Reverse Recovery
  • High-Frequency Operation
  • Temperature-Independent Switching Behavior
  • Extremely Fast Switching
  • Positive temperature coefficient on VF
Benefits
  • Reduces system size, weight, and cooling requirements
  • Increased power density
  • Improved system efficiency at high switching frequencies
  • Parallel mode operation possible
Applications
  • Fast EV charging
  • Commercial vehicles
  • Solar systems Power Converters
  • Switch Mode Power Supplies (SMPS)
  • Uninterruptible Power Supplies (UPS)
  • Motor Drives

Documents, Tools & Support

Documents

Document Type
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Application Notes
Sales Sheets & Flyers
Sales Terms
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
Sales Terms
Technical SupportPower Applications Forum

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