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  • 1000 V Discrete Silicon Carbide MOSFETs

1000 V Discrete Silicon Carbide MOSFETs

1000 V Silicon Carbide (SiC) power MOSFETs for fast switching power devices
Note Last Time Buy.
Wolfspeed offers a series of 1000 V Silicon Carbide (SiC) MOSFETs optimized for fast switching devices such as electric-vehicle charging systems; industrial power supplies; and renewable energy systems. The 1000 V Silicon Carbide MOSFETs address many power design challenges by providing a unique device with low on-Resistance; very low output capacitance; and low source inductance for a perfect blend of low switching losses and low conduction losses. Compared to silicon-based solutions; Wolfspeed silicon carbide power device technology enables increased system power density; higher switching frequencies; reduced component-count; and reduced size of components like inductors; capacitors; filters & transformers.
Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
Angled product photo of the front and back of the TO-263-7 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
Angled product photo of the front and back of the TO-263-7 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
Angled product photo of the front and back of the TO-263-7 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
  • Overview
  • Parametric Data
  • Product Details
  • Featured Resources
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  • Overview
  • Parametric Data
  • Product Details
  • Featured Resources
  • Tools & Support

Parametric Data

1000 V Discrete Silicon Carbide MOSFETs

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1000 V Discrete Silicon Carbide MOSFETs - Filter By

1000 V Discrete Silicon Carbide MOSFETs

Product SKU
Buy Online
Request Sample
Data Sheet
CAD Model
Status
Blocking Voltage
RDS(ON) at 25°C
Current Rating
Tjmax
Package
Qualification
C3M0065100K
Last Time Buy
1000 V
65 mΩ
35 A
150 °C
TO-247-4
Industrial
C3M0120100K
Last Time Buy
1000 V
120 mΩ
22 A
150 °C
TO-247-4
Industrial
C3M0065100J
Last Time Buy
1000 V
65 mΩ
35 A
150 °C
TO-263-7
Industrial
C3M0120100J
Last Time Buy
1000 V
120 mΩ
22 A
150 °C
TO-263-7
Industrial

End of Section

Product Details

Features

  • Minimum of 1kV Vbr across entire operating temperature range (no need to derate)
  • High-speed switching with low output capacitance
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Easy to parallel and simple to drive
  • Kelvin source pin to reduce switching losses and ringing

Benefits

  • Enables a reduction in overall system cost
  • Improves system efficiency while decreasing system-size
  • Enables a 30% reduction in component-count while achieving more than 3x increase in power density and a 33% increase in output power
  • Enables hard switching topologies

Typical Applications

  • Industrial power supplies
  • Renewable energy systems
  • Fast electric vehicle charging systems
  • Onboard electric vehicle charging

Featured Resources

Design Tools

SpeedFit Design SimulatorLTspice & PLECS Models

Technical Support

Power Applications Forum

Featured Application Notes

PRD-08367: EV Charging Power Topologies Design Guidebook
PRD-06752: PCB Layout Techniques for Discrete SiC MOSFETs
PRD-05653: Recommended Solder Profiles for Power Products
PRD-05652: Mounting Recommendations and Thermal Measurement for Wolfspeed® SiC Power Devices in Through-Hole Packages

Documents, Tools & Support

  • Technical & Sales Documents
  • Tools & Support
  • Compliance

Documents

Document Type
Document Name
Last Updated
Application Notes
PRD-05652: Mounting Recommendations and Thermal Measurement for Wolfspeed® SiC Power Devices in Through-Hole Packages
02/2025
Application Notes
PRD-04814: Design Options for Wolfspeed® Silicon Carbide MOSFET Gate Bias Power Supplies
01/2025
Application Notes
PRD-08907: Mitigating EMI with SiC Solutions in Renewable Energy & Grid-Connected Power Converters
New
01/2025
Application Notes
PRD-06752: PCB Layout Techniques for Discrete SiC MOSFETs
09/2024
Application Notes
PRD-08710: Measuring Stray Inductance in Power Electronics Systems
07/2024
Application Notes
PRD-03043: Measuring Switching and Conduction Losses in LTspice® Simulation Software
01/2024
Application Notes
PRD-06701: Thermal Management of Bottom-Side Cooled Surface-Mount Devices & Design Considerations
12/2023
Application Notes
PRD-08296: SiC MOSFET Short Circuit Events
11/2023
Application Notes
PRD-06933: Capacitance Ratio and Parasitic Turn-on
01/2023
Application Notes
PRD-05653: Recommended Solder Profiles for Power Products
09/2022
Test Report
PRD-02344: SiC MOSFET Short-Circuit Protection Using Skyworks™ Si828x Gate Driver
03/2022
White Papers
Gen 4 Silicon Carbide Technology: Redefining Performance and Durability in High-Power Applications
New
01/2025
Product Catalog
Power Product Line Card
01/2025
Sales Terms
Wolfspeed, Inc. Sales Terms and Conditions
04/2025
Sales Terms
Power Product Packing & Shipping Reference Guide
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs.
03/2025

Knowledge Center

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Design Resources

Key Testing Considerations for Migrating from Silicon (Si) to Silicon Carbide (SiC) in Power Designs

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Powerful Perspectives

Partnering for Maximum Impact: An Interview with Paul Wheeler

Continue Reading  Thought Leadership
PowerMakers

Breaking the Mold: Redefining What’s Possible Through Product Engineering  

Continue Reading  Thought Leadership

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