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1200 V Automotive Qualified Bare Die Silicon Carbide MOSFETs – Gen 3+

Wolfspeed's Automotive Qualified 1200 V; Gen 3+ Silicon Carbide (SiC) Bare Die MOSFETs
Wolfspeed’s Generation 3+ of high performance silicon carbide MOSFET in a packageless bare die format to be implemented into any custom module design. The high blocking voltage with low on-resistance, high speed switching with low capacitance make this MOSFET ideal for applications in automotive drivetrain and motor drives.

Parametric Data

1200 V Automotive Qualified Bare Die Silicon Carbide MOSFETs – Gen 3+

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1200 V Automotive Qualified Bare Die Silicon Carbide MOSFETs – Gen 3+

Product SKU
Buy Online
Data Sheet
Status
Blocking Voltage
RDS(ON) at 25°C
Current Rating
Output Capacitance
Reverse Recovery Charge (Qrr)
Reverse Recovery Time (Trr)
Maximum Junction Temperature
Generation
Qualification
EPM3-1200-R015D
Active
1200 V
15 mΩ
148 A
200 pF
1388 nC
34 ns
175 °C
Gen 3+
Automotive
Active
1200 V
13 mΩ
160 A
226 pF
1259 nC
34 ns
175 °C
Gen 3+
Automotive
Active
1200 V
14 mΩ
149 A
200 pF
1068 nC
31 ns
175 °C
Gen 3+
Automotive

Product Details

Features
  • Automotive Qualified
  • High blocking voltage with industry leading low RDS(on) over temperature stability
  • Resistant to latch-up
  • High gate resistance for drives
Benefits
  • Improves System Efficiency with lower switching and conduction losses
  • Reduces System Size, Weight, and Cooling Requirements
  • Enables high switching frequency operation
  • Easy to parallel and compatible with standard gate drive design
Typical Applications
  • Automotive Drivetrain
  • Motor Drives
  • Solid State Circuit Breaker
  • Resonant Topologies

Tools & Support

Documents

Document Type
Document Name
Last Updated
Application Notes
04/2024
Application Notes
11/2023
Application Notes
01/2023
Application Notes
11/2021
Sales Sheets & Flyers
03/2022
Sales Terms
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
04/2024
Sales Terms
12/2021

Knowledge Center

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Design Resources

Analyzing Transient Behavior Using a Double Pulse Test Simulation in LTspice

See how Wolfspeed LTspice models can make designing with silicon carbide in power electronics systems more efficient, cost-effective, and accurate. Get started optimizing your system design, without the need for physical samples or test kits.
View Now  Videos
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