Wolfspeed’s 650 V Silicon Carbide (SiC) Schottky diode technology is optimized for high-performance power electronics applications; including server power supplies; electric vehicle charging systems; energy storage systems; solar (PV) inverters; and consumer electronics.
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Blocking Voltage | Current Rating | Generation | Forward Voltage(VF(type)) | Maximum Continuous Current (IF) | Total Capacitive Charge (QC (typ)) | Total Power Dissipation (PTOT) | Package | Qualification | Recommended For New Design? |
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C3D04065E | 650 V | 4 A | Gen 3 | 1.5 V | 4 A | 8.5 nC | 75 W | TO-252-2 | Industrial | Yes |
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| Technical Papers & Articles | by Zachary D. Schwartz and George E. Ponchak – A SiC Clapp oscillator fabricated on an alumina substrate with chip capacitors and spiral inductors is designed for high temperature operation at 1 GHz. The oscillator operated from 30 to 200 ºC with an output power of 21.8 dBm at 1 GHz and 200 ºC. The efficiency at 200 ºC is 15 %. The frequency variation over the temperature range is less than 0.5 %.
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| Sales Terms | This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
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