Wolfspeed’s 650 V Silicon Carbide (SiC) Schottky diode technology is optimized for high-performance power electronics applications; including server power supplies; electric vehicle charging systems; energy storage systems; solar (PV) inverters; and consumer electronics.
Lowest forward voltage (Vf) drop over temperature in the industry
Zero reverse-recovery charge (Qrr) for ultra-fast switching operations
Robust MPS technology with high surge capability
High reverse-voltage blocking capability
Direct drop-in replacement for current silicon diodes and other silicon carbide diodes
Benefits
Improves System Efficiency with lower conduction loss
Enables high switching frequency operation
Improves System Level Power Density
Reduces System Size; Weight; and Cooling Requirements
Applications
Industrial Power Supplies
Server/Telecom
EV-Charging Systems
Energy Storage Systems (ESS)
Uninterruptible Power Supplies (UPS)
Battery Management Systems (BMS)
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by Zachary D. Schwartz and George E. Ponchak – A SiC Clapp oscillator fabricated on an alumina substrate with chip capacitors and spiral inductors is designed for high temperature operation at 1 GHz. The oscillator operated from 30 to 200 ºC with an output power of 21.8 dBm at 1 GHz and 200 ºC. The efficiency at 200 ºC is 15 %. The frequency variation over the temperature range is less than 0.5 %.
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This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
Wolfspeed Silicon Carbide technology offer proven reliability even in the most demanding power supply applications, providing a more sustainable, cost-effective way to address issues relating to extreme temperature.
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