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650 V Discrete Silicon Carbide Schottky Diodes

Angled product photo of the front and back of the QFN package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
Angled product photo of the front and back of the TO-220-2 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
Angled product photo of the front and back of the TO-220-Isolated package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
C3D16065A
650 V; 16 A; TO-220-2 package; Gen 3 Discrete Silicon Carbide (SiC) Schottky Diode

Wolfspeed’s 650 V Silicon Carbide (SiC) Schottky diode technology is optimized for high-performance power electronics applications; including server power supplies; electric vehicle charging systems; energy storage systems; solar (PV) inverters; and consumer electronics.

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650 V Discrete Silicon Carbide Schottky Diodes

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650 V Discrete Silicon Carbide Schottky Diodes

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Blocking Voltage
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Forward Voltage(VF(type))
Maximum Continuous Current (IF)
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Recommended For New Design?
C3D16065A
650 V
16 A
Gen 3
1.5 V
16 A
44 nC
150 W
TO-220-2
Industrial
Yes

Product Details

Features
  • Lowest forward voltage (Vf) drop over temperature in the industry
  • Zero reverse-recovery charge (Qrr) for ultra-fast switching operations
  • Robust MPS technology with high surge capability
  • High reverse-voltage blocking capability
  • Direct drop-in replacement for current silicon diodes and other silicon carbide diodes
Benefits
  • Improves System Efficiency with lower conduction loss
  • Enables high switching frequency operation
  • Improves System Level Power Density
  • Reduces System Size; Weight; and Cooling Requirements
Applications
  • Industrial Power Supplies
  • Server/Telecom
  • EV-Charging Systems
  • Energy Storage Systems (ESS)
  • Uninterruptible Power Supplies (UPS)
  • Battery Management Systems (BMS)

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by Zachary D. Schwartz and George E. Ponchak – A SiC Clapp oscillator fabricated on an alumina substrate with chip capacitors and spiral inductors is designed for high temperature operation at 1 GHz. The oscillator operated from 30 to 200 ºC with an output power of 21.8 dBm at 1 GHz and 200 ºC. The efficiency at 200 ºC is 15 %. The frequency variation over the temperature range is less than 0.5 %.
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This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
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Enterprise Power Supply

Climate and Business Benefit from Silicon Carbide Use in Enterprise Data Center Infrastructure

Wolfspeed Silicon Carbide technology offer proven reliability even in the most demanding power supply applications, providing a more sustainable, cost-effective way to address issues relating to extreme temperature.
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