赋能人工智能未来图景

基于碳化硅的人工智能：协同效应，合力更强

电气工程师们正面临着一个划时代的创新机遇。人工智能时代已经到来，并且其扩展速度要求我们共同致力于在电网层面实现更可靠、更高效的能源转换和存储。Wolfspeed 在中高电压碳化硅领域的深厚专业知识及其广泛的功率封装产品组合，使得系统架构师们能够快速开发满足当今和未来先进计算需求的机架电源和基础设施解决方案。

采用 Wolfspeed 碳化硅，革新数据中心基础设施

点击交互式框图，查看各种功率系统的常见拓扑（和推荐产品）。

Data-Center-Power-Distribution-zhcn

Data-Center-Power-Distribution-zhcn

核心应用

Wolfspeed Silicon Carbide Power Components for Server Power Supplies

Wolfspeed Silicon Carbide Power Components for Server Power Supplies

数据中心机架电源

利用可扩展且兼容相同占位面积的封装，增强不断演进的机架电源设计的供应链稳定性。

Image of solid state transformers with the sun going down in the background.

Image of solid state transformers with the sun going down in the background.

固态变压器

了解碳化硅如何助力实现更紧凑、模块化的变压器解决方案，同时确保为其供电的设施获得最大程度的正常运行时间。

Image of industrial sized HVAC systems outside with clouds and a blue sky in the background.

Image of industrial sized HVAC systems outside with clouds and a blue sky in the background.

冷却系统

了解如何采用易于组装的基于 WolfPACK™ 模块的设计，来设计低损耗且紧凑的冷却系统。

Image of a large industrial energy storage system with windmills and the sky and clouds in the background.

Image of a large industrial energy storage system with windmills and the sky and clouds in the background.

储能系统

采用可靠的基于电池的储能系统，更好地管理能源供需，不受环境或时间段的影响。

Image of an industrial solar farm outside with windmills, mountains, and the setting sun in the background.

Image of an industrial solar farm outside with windmills, mountains, and the setting sun in the background.

公用事业规模可再生能源

对于人工智能负载的数据中心而言，间歇性电力损失是不可接受的。获取系统级支持和产品推荐，通过可再生能源设计助力提升电网稳定性。

关键产品

Rendering of Wolfspeed's 10000 V Bare Die silicon carbide (SiC) MOSFET

Rendering of Wolfspeed's 10000 V Bare Die silicon carbide (SiC) MOSFET

10000 V 裸芯片碳化硅 MOSFET

10 kV 裸芯片 MOSFET 提供了设计灵活性，使得系统的尺寸、重量、可靠性和拥有成本得到显著改善。

Composite image of the front and back of a Wolfspeed Discrete Silicon Carbide Schottky diode in a TOLT package.

Composite image of the front and back of a Wolfspeed Discrete Silicon Carbide Schottky diode in a TOLT package.

650 V TOLT 顶部散热 MOSFET

凭借 Wolfspeed 增强的功率循环能力，改善功率因数校正 (PFC) 设计中的热性能，并快速满足 IPC-9701 标准。

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

1200 V TO-247-4 MOSFET

Wolfspeed 的新款第四代 (Gen 4) MOSFET 具有高电容比，并在典型温度范围内提供卓越的性能。

Wolfspeed WolfPACK™ 2.3 kV Silicon Carbide power module GM4 & GM4T package

Wolfspeed WolfPACK™ 2.3 kV Silicon Carbide power module GM4 & GM4T package

2300 V 半桥 WolfPACK™ 功率模块

在 1500 V 直流母线储能系统的行业标准外形尺寸中，实现可靠的两电平操作。

最新新闻

Mar 05, 2026

Wolfspeed Introduces Industry’s First Commercially Available 10,000 V Silicon Carbide Power MOSFET

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Feb 11, 2026

Wolfspeed Accelerates AI-Powered Manufacturing and Operations with Snowflake

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Jan 29, 2026

Wolfspeed Unveils Next-Gen TOLT Portfolio to Address Surging AI Datacenter Demand

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Jan 13, 2026

Wolfspeed Achieves 300mm Silicon Carbide (SiC) Technology Breakthrough

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特色文章

Wolfspeed’s 300 mm Silicon Carbide Technology as a Materials Foundation for Next-Generation AI and HPC Advanced Packaging

Continue Reading Technical Articles

Answering the call:
Powering AI with reliable silicon carbide-based solid-state transformers

Continue Reading White Paper

Designing with Top Side Cooled (TSC) Silicon Carbide Power Devices

Improve thermal management and conserve power with Wolfspeed’s New TSC MOSFETs and Schottky diodes.

Continue Reading Technical Articles

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