Silicon Carbide Power Modules
Wolfspeed is able to offer the benefits of vertical integration from Silicon Carbide (SiC) material to package enabling us to provide leading Silicon Carbide technology throughout the supply chain. The goal of our power modules is to meet each customer's system design requirements with a package that offers best-in-class Silicon Carbide performance. We offer two distinct product categories to serve different customer value propositions: Industry-Standard Footprints and Optimized Footprints.
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Silicon Carbide Power Modules
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Silicon Carbide Power Modules
Product SKU | Buy Online | Request Sample | Data Sheet | CAD Model | Status | Package | Configuration | Blocking Voltage | Current Rating | RDS(ON) at 25°C | Generation | Tjmax | Module Size | Pre-Applied TIM | Qualification | View Product |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Active | XM | Half-Bridge | 1200 V | 450 A | 2.6 mΩ | Gen 3 MOS | 175 °C | 80 x 53 x 19 mm | No | Automotive | ||||||
Active | XM | Half-Bridge | 1200 V | 450 A | 2.6 mΩ | Gen 3 MOS | 175 °C | 80 x 53 x 19 mm | No | Industrial | ||||||
Active | XM | Half-Bridge | 1200 V | 425 A | 3.2 mΩ | Gen 3 MOS | 175 °C | 80 x 53 x 19 mm | No | Industrial | ||||||
Active | XM | Half-Bridge | 1700 V | 320 A | 3.5 mΩ | Gen 3 | 175 °C | 80 x 53 x 19 mm | No | Industrial | ||||||
Active | XM | Half-Bridge | 1200 V | 400 A | 4 mΩ | Gen 3 MOS | 175 °C | 80 x 53 x 19 mm | No | Industrial | ||||||
CAB600M33LM3 New | Active | LM | Half-Bridge | 3300 V | 770 A | 2.7 mΩ | Gen 3 | 175 °C | 144 x 100 x 40 mm | No | Industrial | |||||
Active | HM | Half-Bridge Rectifier | 1200 V | 600 A | Gen 6 | 175 °C | 110 mm x 65 mm x 12.2 mm | No | Industrial | |||||||
Active | HM | Half-Bridge Rectifier | 1700 V | 600 A | Gen 6 | 175 °C | 110 mm x 65 mm x 12.2 mm | No | Industrial | |||||||
Active | HM | Half-Bridge Right GK for Paralleling | 1200 V | 1.33 mΩ | Gen 3 MOS | 175 °C | 110 mm x 65 mm x 12.2 mm | No | Industrial | |||||||
Active | HM | Half-Bridge | 1200 V | 760 A | 1.33 mΩ | Gen 3 MOS | 175 °C | 110 mm x 65 mm x 12.2 mm | No | Industrial | ||||||
Active | HM | Half-Bridge | 1700 V | 650 A | 1.67 mΩ | Gen 3 MOS | 175 °C | 110 mm x 65 mm x 12.2 mm | No | Industrial | ||||||
Active | HM | Half-Bridge | 1200 V | 480 A | 2.29 mΩ | Gen 3 MOS + Diodes | 175 °C | 110 mm x 65 mm x 12.2 mm | No | Industrial | ||||||
Active | HM | Half-Bridge | 1700 V | 500 A | 2.5 mΩ | Gen 3 MOS | 175 °C | 110 mm x 65 mm x 12.2 mm | No | Industrial | ||||||
Active | HM | Half-Bridge | 1700 V | 380 A | 3.3 mΩ | Gen 3 MOS + Diodes | 175 °C | 110 mm x 65 mm x 12.2 mm | No | Industrial | ||||||
CAB004M12GM4 New | Active | GM | Half-Bridge | 1200 V | 200 A | 4 mΩ | Gen 4 | 175 °C | 62.8 mm x 56.7 mm | No | Industrial | |||||
Active | GM | Half-Bridge | 1200 V | 200 A | 4 mΩ | Gen 4 | 175 °C | 62.8 mm x 56.7 mm | Yes | Industrial | ||||||
CAB5R0A23GM4 New | Active | GM | Half Bridge (AlN substrate) | 2300 V | 200 A | 5 mΩ | Gen 4 MOS | 150 °C | 62.8 mm x 56.7 mm | No | Industrial | |||||
Active | GM | Half Bridge (AlN substrate) | 2300 V | 200 A | 5 mΩ | Gen 4 MOS | 150 °C | 62.8 mm x 56.7 mm | Yes | Industrial | ||||||
Active | GM | Half Bridge (AlN substrate) | 2300 V | 200 A | 6 mΩ | Gen 4 MOS | 150 °C | 62.8 mm x 56.7 mm | Yes | Industrial | ||||||
CAB6R0A23GM4 New | Active | GM | Half Bridge (AlN substrate) | 2300 V | 200 A | 6 mΩ | Gen 4 MOS | 150 °C | 62.8 mm x 56.7 mm | No | Industrial | |||||
Active | GM | Half Bridge (AlN substrate) | 1200 V | 200 A | 6 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | Yes | Industrial | ||||||
Active | GM | Half-Bridge | 1200 V | 200 A | 6 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | Yes | Industrial | ||||||
Active | GM | Half-Bridge | 1200 V | 200 A | 6 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | No | Industrial | ||||||
Active | GM | Half Bridge (AlN substrate) | 1200 V | 200 A | 6 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | No | Industrial | ||||||
CAB7R5A23GM4 New | Active | GM | Half Bridge (AlN substrate) | 2300 V | 170 A | 7.5 mΩ | Gen 4 MOS | 150 °C | 62.8 mm x 56.7 mm | No | Industrial | |||||
Active | GM | Half Bridge (AlN substrate) | 2300 V | 170 A | 7.5 mΩ | Gen 4 MOS | 150 °C | 62.8 mm x 56.7 mm | Yes | Industrial | ||||||
Active | GM | Half Bridge (AlN substrate) | 1200 V | 181 A | 8 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | Yes | Industrial | ||||||
Active | GM | Half-Bridge | 1200 V | 160 A | 8 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | Yes | Industrial | ||||||
Active | GM | Half Bridge (AlN substrate) | 1200 V | 181 A | 8 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | No | Industrial | ||||||
Active | GM | Half-Bridge | 1200 V | 160 A | 8 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | No | Industrial | ||||||
Active | GM | T-Type | 1200 V | 100 A | 11 mΩ | Gen 4 | 175 °C | 62.8 mm x 56.7 mm | Yes | Industrial | ||||||
CHB011M12GM4 New | Active | GM | T-Type | 1200 V | 100 A | 11 mΩ | Gen 4 | 175 °C | 62.8 mm x 56.7 mm | No | Industrial | |||||
Active | GM | Full-Bridge | 1200 V | 100 A | 11 mΩ | Gen 4 | 175 °C | 62.8 mm x 56.7 mm | Yes | Industrial | ||||||
CBB011M12GM4 New | Active | GM | Full-Bridge | 1200 V | 100 A | 11 mΩ | Gen 4 | 175 °C | 62.8 mm x 56.7 mm | No | Industrial | |||||
Active | GM | Half-Bridge | 1200 V | 141 A | 11 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | Yes | Industrial | ||||||
Active | GM | Half-Bridge | 1200 V | 141 A | 11 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | No | Industrial | ||||||
Active | GM | Six-pack (three-phase) | 1200 V | 50 A | 16 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | Yes | Industrial | ||||||
Active | GM | Six-pack (three-phase) | 1200 V | 50 A | 16 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 56.7 mm | No | Industrial | ||||||
Active | FM | Half-Bridge | 1200 V | 117 A | 11 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | Yes | Industrial | ||||||
Active | FM | Half-Bridge | 1200 V | 117 A | 11 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | No | Industrial | ||||||
Active | FM | Half-Bridge | 1200 V | 84 A | 16 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | Yes | Industrial | ||||||
Active | FM | Half-Bridge | 1200 V | 84 A | 16 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | No | Industrial | ||||||
Active | FM | Full-Bridge | 1200 V | 48 A | 21 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | Yes | Industrial | ||||||
Active | FM | Six-pack (three-phase) | 1200 V | 30 A | 21 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | Yes | Industrial | ||||||
Active | FM | Full-Bridge | 1200 V | 48 A | 21 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | No | Industrial | ||||||
Active | FM | Six-pack (three-phase) | 1200 V | 30 A | 21 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | No | Industrial | ||||||
Active | FM | Full-Bridge | 1200 V | 37 A | 32 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | Yes | Industrial | ||||||
Active | FM | Six-pack (three-phase) | 1200 V | 30 A | 32 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | Yes | Industrial | ||||||
Active | FM | Full-Bridge | 1200 V | 37 A | 32 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | No | Industrial | ||||||
Active | FM | Six-pack (three-phase) | 1200 V | 30 A | 32 mΩ | Gen 3 MOS | 150 °C | 62.8 mm x 33.8 mm | No | Industrial | ||||||
Active | DM | Half-Bridge | 900 V | 350 A | 2.5 mΩ | Gen 3 MOS | 175 °C | 51.6 mm x 40.8 mm | No | Industrial | ||||||
Active | 62 mm | Half-Bridge | 1200 V | 530 A | 2.6 mΩ | Gen 3 MOS + Diodes | 150 °C | 105 x 62 x 31 mm | No | Industrial + HV-H3TRB | ||||||
Active | 62 mm | Half-Bridge | 1200 V | 530 A | 2.6 mΩ | Gen 3 MOS + Diodes | 150 °C | 105 x 62 x 31 mm | No | Industrial | ||||||
Active | 62 mm | Half-Bridge | 1200 V | 530 A | 2.6 mΩ | Gen 3 MOS | 150 °C | 105 x 62 x 31 mm | No | Industrial | ||||||
Active | 62 mm | Half-Bridge | 1200 V | 530 A | 2.67 mΩ | Gen 3 MOS + Diodes | 150 °C | 105 x 62 x 31 mm | No | Industrial + HV-H3TRB | ||||||
Active | 62 mm | Half-Bridge | 1200 V | 350 A | 4 mΩ | Gen 3 MOS + Diodes | 150 °C | 105 x 62 x 31 mm | No | Industrial + HV-H3TRB | ||||||
Active | 62 mm | Half-Bridge | 1200 V | 350 A | 4 mΩ | Gen 3 MOS + Diodes | 150 °C | 105 x 62 x 31 mm | No | Industrial | ||||||
Active | 62 mm | Half-Bridge | 1200 V | 350 A | 4 mΩ | Gen 3 MOS + Diodes | 150 °C | 105 x 62 x 31 mm | No | Industrial + HV-H3TRB | ||||||
Active | 62 mm | Half-Bridge | 1700 V | 310 A | 4.29 mΩ | Gen 3 MOS + Diodes | 150 °C | 105 x 62 x 31 mm | No | Industrial + HV-H3TRB | ||||||
Active | 62 mm | Half-Bridge | 1700 V | 310 A | 4.29 mΩ | Gen 3 MOS + Diodes | 150 °C | 105 x 62 x 31 mm | No | Industrial | ||||||
Active | 62 mm | Half-Bridge | 1700 V | 310 A | 4.29 mΩ | Gen 3 MOS + Diodes | 150 °C | 105 x 62 x 31 mm | No | Industrial + HV-H3TRB | ||||||
Active | 62 mm | Half-Bridge | 1200 V | 175 A | 8 mΩ | Gen 3 MOS + Diodes | 150 °C | 105 x 62 x 31 mm | No | Industrial | ||||||
Active | 62 mm | Half-Bridge | 1200 V | 175 A | 8 mΩ | Gen 3 MOS + Diodes | 150 °C | 105 x 62 x 31 mm | No | Industrial | ||||||
Active | 62 mm | Half-Bridge | 1200 V | 175 A | 8 mΩ | Gen 3 MOS + Diodes | 150 °C | 105 x 62 x 31 mm | No | Industrial + HV-H3TRB | ||||||
Last Time Buy | 62 mm | Half-Bridge | 1700 V | 225 A | 8 mΩ | Gen 2 MOS + Diodes | 150 °C | 106 x 62 x 30 mm | No | Industrial | ||||||
Last Time Buy | 62 mm | Half-Bridge | 1200 V | 120 A | 13 mΩ | Gen 2 MOS + Diodes | 150 °C | 106 x 62 x 30 mm | No | Industrial | ||||||
NRND | 62 mm | Half-Bridge | 1200 V | 300 A | 4.17 mΩ | Gen 2 MOS + Diodes | 150 °C | 106 x 62 x 30 mm | No | Industrial + HV-H3TRB | ||||||
NRND | 62 mm | Half-Bridge | 1200 V | 300 A | 4.2 mΩ | Gen 2 MOS + Diodes | 150 °C | 106 x 62 x 30 mm | No | Industrial | ||||||
NRND | 62 mm | Half-Bridge | 1200 V | 110 A | 12.5 mΩ | Gen 2 MOS + Diodes | 150 °C | 106 x 62 x 30 mm | No | Industrial | ||||||
NRND | 62 mm | Half-Bridge | 1200 V | 110 A | 12.5 mΩ | Gen 2 MOS + Diodes | 150 °C | 106 x 62 x 30 mm | No | Industrial + HV-H3TRB |
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Documents
Document Type | Document Name | Last Updated |
---|---|---|
Data Sheets | 08/2024 | |
Data Sheets | 08/2024 | |
Data Sheets | 08/2024 | |
Data Sheets | 01/2024 | |
User Guide |