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    • 3300 V LM Silicon Carbide Half-Bridge Power Modules

    3300 V LM Silicon Carbide Half-Bridge Power Modules

    Wolfspeed's 3300 V silicon carbide half-bridge power modules enable high efficiency and reliability for high power applications
    Wolfspeed has developed the LM power module platform to provide the benefits of silicon carbide in applications that require increased power density, high reliability, faster switching and long lifetime. The LM module enables 175°C continuous junction temperature operation with high thermal conductivity Silicon Nitride (Si3N4) substrate to ensure mechanical robustness under extreme conditions and a lightweight AlSiC baseplate. The 3300 V power modules are a perfect fit for demanding applications such as heavy equipment, solid state circuit breakers, industrial UPSs and motor drives, and more.

    The 3300 V modules are designed for low RDS(ON), are easy to parallel and compatible with standard gate driver design. At a system level, moving from a silicon to a silicon carbide module solution can help enable smaller, lighter, and more cost-effective designs.

    Mid-angle product photography of Wolfspeed's LM Power Module
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    CAB600M33LM3

    Purchase CAB600M33LM3

    Add to cart, or click Buy Now to purchase this product directly from any one of our distributors.

    Active
    LM
    Half-Bridge
    3300 V
    770 A
    2.7 mΩ
    Gen 3
    175 °C
    144 x 100 x 40 mm
    Industrial
    Mid-angle product photography of Wolfspeed's LM Power Module

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    PowerMakers:
    How Wolfspeed’s Fayetteville Team Turns Silicon Carbide Expertise into Customer Momentum

    At our Fayetteville site, Ty McNutt and his team don’t just solve for specs —they rethink systems. That’s the difference between supplying parts and becoming the partner customers rely on.
    Continue Reading  Thought Leadership

    Beyond Silicon’s Limits:
    How High‑Voltage Silicon Carbide is Redefining Critical Power

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    Product Details

    Features

    • Low RDS(ON)
    • AlSiC baseplate
    • High thermal conductivity AMB SiN substrates (90 W/m·K at 25 C)
    • Exemplary thermal-mechanical cycling performance
    • Low stray Inductance (10 nH)

    Benefits

    • Faster switching speeds and higher efficiencies than Si IGBTs
    • Lower system-level volume, weight, and cost
    • Candidate for reduced or no cooling requirements
    • Wide operating temperature range, -55º C to 175º C

    Typical Applications

    • Heavy Duty Industrial E-Mobility: Transportation, Construction, Agricultural, Mining, Logging
    • Ultra-Fast DC Chargers
    • Industrial Motor Drives
    • Industrial Uninterruptible Power Supply (UPS) Systems
    • Marine and Aerospace Propulsion
    • Terrestrial Power Distribution Systems
    • High Voltage Direct Current (HVDC) and Flexible AC Transmission System (FACTS) Controllers

    Featured Resources

    Design Tools

    SpeedFit Design SimulatorLTspice & PLECS Models

    Technical Support

    Power Applications Forum

    Featured Documents

    PRD-08407: LM Power Module Platform Mounting User Guide
    PRD-08409: LM3 Power Module Thermal Interface Material Application User Guide
    PRD-08408: LM Power Module Signal Pinout User Guide
    3300 V LM SiC Half-Bridge Power Modules Product Brief

    Documents, Tools & Support

    • Technical & Sales Documents
    • Tools & Support
    • Compliance

    Documents

    25 Documents Available
    Document Type
    Document Name
    Last Updated
    Data Sheets
    CAB600M33LM3 (PDF)
    03/2026
    Data Sheets
    CGD3300HB6P-LM3 Dual Channel Differential Isolated Half Bridge Gate Driver Board (PDF)
    01/2024
    User Guide
    PRD-08407: LM Power Module Platform Mounting User Guide (PDF)
    08/2025
    User Guide
    PRD-09035: Wolfspeed Power Module RC Thermal Models User Guide (PDF)
    01/2025
    User Guide
    PRD-08409: LM3 Power Module Thermal Interface Material Application User Guide (PDF)
    05/2024
    User Guide
    PRD-08408: LM Power Module Signal Pinout User Guide (PDF)
    04/2024
    User Guide
    KIT-CRD-CIL33N-LM: Dynamic Performance Evaluation for the LM3 Power Modules User Guide (PDF)
    01/2024
    Application Notes
    PRD-09597: Introduction to Pulsed Current Safe Operating Area (PDF)
    New
    10/2025
    Application Notes
    PRD-09301: Gate Driver Design for SiC Power Modules (PDF)
    05/2025
    Application Notes
    PRD-07845: Power Module Baseplate Capacitance and Electromagnetic Compatibility (PDF)
    03/2025
    Application Notes
    PRD-08911: Considerations for Current Balancing in Paralleled SiC Power Modules (PDF)
    01/2025
    Application Notes
    PRD-04814: Design Options for Wolfspeed® Silicon Carbide MOSFET Gate Bias Power Supplies (PDF)
    01/2025
    Application Notes
    PRD-08710: Measuring Stray Inductance in Power Electronics Systems (PDF)
    07/2024
    Application Notes
    PRD-08734: Understanding and Simulating Parasitic Inductance in Silicon Carbide Systems (PDF)
    07/2024
    Application Notes
    PRD-08376: Thermal Characterization Methods and Applications (PDF)
    01/2024
    Application Notes
    PRD-08296: SiC MOSFET Short Circuit Events (PDF)
    11/2023
    Application Notes
    PRD-06379: Environmental Considerations for Power Electronics Systems (PDF)
    08/2023
    Application Notes
    PRD-06933: Capacitance Ratio and Parasitic Turn-on (PDF)
    01/2023
    White Papers
    Designed to Last, Even in the Harshest Environments (PDF)
    New
    11/2025
    White Papers
    Enhancing System Durability with Advanced Packaging for Silicon Carbide (PDF)
    11/2025
    White Papers
    SiC Power Module Reliability: Wolfspeed’s Power Cycling and Lifetime Modeling Approach (PDF)
    New
    11/2025
    White Papers
    Driving Industrial E-Mobility With Silicon Carbide Semiconductors (Link)
    11/2024
    Sales Sheets & Flyers
    3300 V LM SiC Half-Bridge Power Modules Product Brief (PDF)
    06/2024
    Sales Terms
    Wolfspeed, Inc. Sales Terms and Conditions (PDF)
    04/2025
    Product Catalog
    Power Product Line Card (PDF)
    01/2025

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