Features
- Low RDS(ON)
- Low Stray Inductance
- Increased Thermal Performance
- High Temperature Operation
- AlSiC Baseplate
The 3300 V modules are designed for low RDS(ON), are easy to parallel and compatible with standard gate driver design. At a system level by moving from a silicon-based module to silicon carbide module solution can help enable smaller, lighter, and more cost-effective designs.
Product SKU | Buy Online | Data Sheet | Package | Configuration | Blocking Voltage | Current Rating | RDS(ON) at 25°C | Generation | Maximum Junction Temperature | Module Size | Recommended For New Design? | Qualification | View Product |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
CAB600M33LM3 | LM | Half-Bridge | 3300 V | 800 A | 2.7 mΩ | Gen 3 | 150 °C | 100 x 140 x 40 mm | Yes | Industrial |
Document Type | Document Name |
---|---|
Application Notes | |
Application Notes | |
Application Notes | |
Videos | |
Product Catalog | |
Sales Sheets & Flyers | |
Sales Terms | This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
|
Sales Terms |