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Blocking Voltage 1700 V
Current Rating at 25°C 72 A
RDS(ON) at 25°C 45 mΩ
Package TO-247-3
Total Switching Energy Loss 3 mJ
Gate charge total 188 nC
Maximum junction temperature 150 °C
Lead-frame materials 100% matte, tin solder finish over a copper lead frame

Silicon Carbide Power MOSFET
C2M Planar MOSFET Technology
N-Channel Enhancement Mode

SKU: C2M0045170D

Wolfspeed introduces its latest breakthrough in SiC power device technology: the industry’s first 1700-V 45mOhm SiC MOSFET.  MOSFET is designed to support new 1500V bus applications in topologies such a boost converters and Aux power supplies. Optimized for high-frequency power electronics applications, including renewable-energy inverters, battery charging systems, and three-phase industrial power supplies, the new 1700-V platform enables smaller and higher-efficiency next-generation power conversion systems.

See our complete list of reference designs for examples of popular topologies commonly used with SiC today. Download our LTspice or PLECS models or try our SpeedFit design simulator.


  • 1700V of blocking voltage with low RDS(on)
  • High-speed switching with low capacitances
  • Avalanche ruggedness
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Easy to parallel and simple to drive



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