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Blocking Voltage 1700 V
Current Rating at 25°C 72 A
Rds(on) at 25°C 45 mΩ
Package TO-247-4 Plus
Gate charge total 188 nC
Maximum junction temperature 150 ˚C
Reverse-Recovery Charge (Qrr) 2 uC
Output Capacitance 171 pF
Technology Diode
Reverse-Recover Time (Trr) 44 ns

Silicon Carbide Power MOSFET C2M Planar MOSFET Technology N-Channel Enhancement Mode

SKU: C2M0045170P


Wolfspeed extends its leadership in SiC technology by introducing two new 1700V SiC discrete MOSFETs in optimized packing with wide creepage and clearance distance between drain and source (~8mm) thereby providing extra electrical isolation suitable for high pollution environments. The package includes a separate kelvin source pin which reduces the source inductance found in traditional TO-247-3 packages and can reduce the switching losses by as much as 30%. The newly released products are available at 45mΩ (C2M0045170P) and 80mΩ (C2M0080170P) and are designed for rapidly evolving solar applications requiring 1500V bus capability. Designers can reduce component-count and simplify designs by moving from multi-level topologies to simpler two-level topologies made possible by the improved switching performance and higher blocking capability. The device features low on-resistance combined with a low gate charge, making it ideally suited for solar boost converters, DC-DC applications as well as AC-AC converters. See our complete list of reference designs for examples of popular topologies commonly used with SiC today.

Features

  • Minimum of 1700V Vbr across entire operating temperature range
  • Optimized package design with wide creepage/clearance between drain and source for high-voltage capability in high-pollution environments
  • Separate power source pin lowers source inductance and provides lower switching losses
  • Clip-mount design with no center mounting hole provides improved electrical isolation
  • 8mm of creepage/clearance between drain and source
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Easy to parallel and simple to drive
  • Documents