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Blocking Voltage 900 V
Current Rating at 25°C 22 A
Rds(on) at 25°C 120 mΩ
Package TO-263-7
Gate charge total 17 nC
Maximum junction temperature 150 °C
Reverse-Recovery Charge (Qrr) 115 nC
Reverse-Recover Time (Trr) 24 ns

Silicon Carbide Power MOSFET
C3M Planar MOSFET Technology
N-Channel Enhancement Mode

SKU: C3M0120090J


Wolfspeed introduces its latest breakthrough in SiC power device technology: the industry’s first 900-V MOSFET platform. Optimized for high-frequency power electronics applications, including renewable-energy inverters, electric-vehicle charging systems, and three-phase industrial power supplies, the new 900-V platform enables smaller and higher-efficiency next-generation power conversion systems at cost parity with silicon-based solutions.

See our complete list of reference designs for examples of popular topologies commonly used with SiC today. Download our LTspice or PLECS models or try our SpeedFit design simulator.

Features

  • New low-impedance package with driver source
  • High-speed switching with low capacitances
  • High blocking voltage with low RDS(on)
  • Avalanche ruggedness
  • Fast intrinsic diode with low reverse recovery (Qrr)
  • Easy to parallel and simple to drive

Documents