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Blocking Voltage 1200 V
Die Size 3.10 x 3.10 mm
Current Rating at 25°C 36 A
RDS(ON) at 25°C 160 mΩ
Package Bare Die
Gate charge total 47 nC
Maximum junction temperature 135 °C

Z-FET® Silicon Carbide MOSFET
N-Channel Enhancement Mode

SKU: CPMF-1200-S160B


  • High-speed switching with low capacitances
  • High blocking voltage with low RDS(on)
  • Avalanche ruggedness
  • Resistant to latch-up
  • Easy to parallel and simple to drive
Note: CPMF devices have been replaced by CPM2 and 
are NOT recommended for new designs.

The recommended CPM2 equivalent is: CPM2-1200-0160B



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