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CPMF-1200-S160B

Z-FET® Silicon Carbide MOSFET N-Channel Enhancement Mode
NOTE: Not recommended for new designs.

Features 

  • High-speed switching with low capacitances
  • High blocking voltage with low RDS(on)
  • Avalanche ruggedness
  • Resistant to latch-up
  • Easy to parallel and simple to drive

CPMF-1200-S160B

Product SKU
Data Sheet
Blocking Voltage
RDS(ON) at 25°C
Generation
Gate Charge Total
Maximum Junction Temperature
Package
Recommended For New Design?
Qualification
CPMF-1200-S160B
1200 V
160 mΩ
Gen 2
47 nC
135 °C
Bare Die
No

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Automotive

Wolfspeed Grows to Meet Supply Challenge and Launches High Performance Gen 3+ Die

Wolfspeed launches automotive 750 V E-Series Bare Die Silicon Carbide MOSFET. The product is automotive qualified with high blocking voltage and low Rds(on), enabling low conduction losses and highest figures of merit in the most demanding applications, such as electric vehicle powertrain and solid-state circuit breakers.
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