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CPMF-1200-S160B

Product rendering of three Wolfspeed Silicon Carbide Bare Die MOSFETs.
1200 V, 160 mΩ, Gen 2 Bare Die SiC MOSFET
NOTE: Not recommended for new designs.
Features 
  • High-speed switching with low capacitances
  • High blocking voltage with low RDS(on)
  • Avalanche ruggedness
  • Resistant to latch-up
  • Easy to parallel and simple to drive

Products

CPMF-1200-S160B

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CPMF-1200-S160B

Product SKU
Data Sheet
Blocking Voltage
RDS(ON) at 25°C
Generation
Gate Charge Total
Maximum Junction Temperature
Package
Recommended For New Design?
CPMF-1200-S160B
1200 V
160 mΩ
Gen 2
47 nC
135 °C
Bare Die
No

Documents, Tools & Support

Documents

Document Type
Document Name
Application Notes
Data Sheets
Product Catalog
Sales Terms
Sales Terms
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs
Technical SupportPower Applications Forum
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