Applications
- Industrial Power Supplies
- Server/Telecom
- EV-Charging Systems
- Energy Storage Systems (ESS)
- Uninterruptible Power Supplies (UPS)
Evaluation Board for 900 V Silicon Carbide C3M™ MOSFET in a 7-pin D2PAK (TO-263-7L)
KIT-CRD-8FF90P
NOTE: Discontinued. SpeedVal™ Kit Modular Evaluation Platform is the recommended replacement.
This evaluation board demonstrates the switching and thermal performance of 900 V Silicon Carbide (SiC) C3M™ MOSFET in a 7-pin D2PAK (TO-263-7L) configured in a half bridge topology. The board is designed for characterizing EON and EOFF losses and steady state thermal performance in Silicon Carbide MOSFETs. The PCB contains AlN inserts under the MOSFETs to provide electrical isolation and optimized heat transfer to the heat sink.
This design :
- Demonstrates use of an AlN inlay PCB for thermal management of surface mount power devices
- Serves as a PCB layout example for driving D2PAK SiC MOSFETs
Specifications
- Max DC Bus Voltage of 650V
- Max Power of 4.2kW @ 100kHz
- Optimized locations for scope probe measurements of drain current; VGS; and Vds
- Predrilled thermocouple locations in the heat sink under the MOSFET
- Synchronous and asynchronous buck and boost topologies supported
- Kit includes two SMA and BNC adapters for measuring VGS waveforms
- Includes heatsink; fan; fan guard; and thermal pads
- Can be configured as full bridge DC/DC by using two evaluation boards
What's Included
- Fully Assembled Evaluation Board
- Schematics
- PCB Design File
- Bill of Materials
- Application Note
Request Separately
- Low Inductance Current Monitor
- Mechanical Specifications
Product Compatibility
Documents, Tools & Support
- Block Diagram
- Technical & Sales Documents
- Tools & Support
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High Voltage, Isolated Gate Driver with Internal Miller Clamp, 2 A Output with Thermal Shutdown. The integrated miller clamp activates on the falling edge of an edge transition to further clamp the output low to counteract miller turn on effects.
C3M0065090J
900 V Silicon Carbide C3M™ MOSFET in 7-pin D2PAK provides low parasitic inductances for faster switching in power conversion applications
C3M0065090J
900 V Silicon Carbide C3M™ MOSFET in 7-pin D2PAK provides low parasitic inductances for faster switching in power conversion applications
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