C2D05120E

1200 V, 5 A, TO-252-2 package, Industrial qualified, Discrete SiC Schottky Diode

Note Obsolete. Recommended replacement:C4D05120E

Image that includes both the front and back of the TO-252-2 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

Image that includes both the front and back of the TO-252-2 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.

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Product SKU	Data Sheet	Blocking Voltage	Current Rating	Generation	Forward Voltage(V_F(type))	Maximum Continuous Current (IF)	Total Capacitive Charge (Q_C (typ))	Total Power Dissipation (P_TOT)	Package	Qualification	Status
C2D05120E		1200 V	5 A	Gen 2	1.6 V	8.5 A	28 nC per leg	136 W	TO-252-2	Industrial	Obsolete

Documents, Tools & Support

Technical & Sales Documents
Tools & Support

Documents

9 Documents Available

Document Type	Document Name	Last Updated
Data Sheets	C2D05120E (PDF)	01/2024
Application Notes	PRD-05653: Recommended Solder Profiles for Power Products (PDF)	09/2022
Application Notes	PRD-05641: Designing with Silicon Carbide in Energy Storage Applications (PDF)	02/2022
White Papers	Designed to Last, Even in the Harshest Environments (PDF) New	11/2025
White Papers	Enhancing System Durability with Advanced Packaging for Silicon Carbide (PDF)	11/2025
White Papers	SiC Power Module Reliability: Wolfspeed’s Power Cycling and Lifetime Modeling Approach (PDF) New	11/2025
Product Catalog	Power Product Line Card (PDF)	01/2025
Sales Terms	Wolfspeed, Inc. Sales Terms and Conditions (PDF)	04/2025
Packing & Shipping	Power Product Packing & Shipping Reference Guide (PDF) This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs.	11/2025

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SiC Power Module Reliability: Wolfspeed’s Power Cycling and Lifetime Modeling Approach

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