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  • C3D1P7060Q

C3D1P7060Q

600 V, 1.7 A, QFN package, Industrial qualified, Discrete SiC Schottky Diode
Note Obsolete.
Angled product photo of the front and back of the QFN package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
  • Overview
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  • Overview
  • Parametric Data
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Parametric Data

No filters selected, showing all 1 products
Product SKU
Data Sheet
Blocking Voltage
Current Rating
Generation
Forward Voltage(VF(type))
Maximum Continuous Current (IF)
Total Capacitive Charge (QC (typ))
Total Power Dissipation (PTOT)
Package
Qualification
Status
C3D1P7060Q
600 V
1.7 A
Gen 3
1.5 V
3 A
4 nC
35.5 W
QFN
Industrial
Obsolete

Documents, Tools & Support

  • Technical & Sales Documents

Documents

7 Documents Available
Document Type
Document Name
Last Updated
Data Sheets
C3D1P7060Q (PDF)
01/2024
Application Notes
Selection Guide of SiC Schottky Diode in CCM PFC Applications (PDF)
09/2015
White Papers
Designed to Last, Even in the Harshest Environments (PDF)
New
11/2025
White Papers
Enhancing System Durability with Advanced Packaging for Silicon Carbide (PDF)
11/2025
White Papers
SiC Power Module Reliability: Wolfspeed’s Power Cycling and Lifetime Modeling Approach (PDF)
New
11/2025
Sales Terms
Wolfspeed, Inc. Sales Terms and Conditions (PDF)
04/2025
Packing & Shipping
Power Product Packing & Shipping Reference Guide (PDF)
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs.
11/2025

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SiC Power Module Reliability: Wolfspeed’s Power Cycling and Lifetime Modeling Approach

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