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C3D1P7060Q

600 V, 1.7 A, QFN package, Industrial qualified, Discrete SiC Schottky Diode
Note Obsolete.
Angled product photo of the front and back of the QFN package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
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Parametric Data

C3D1P7060Q

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C3D1P7060Q

Product SKU
Data Sheet
Blocking Voltage
Current Rating
Generation
Forward Voltage(VF(type))
Maximum Continuous Current (IF)
Total Capacitive Charge (QC (typ))
Total Power Dissipation (PTOT)
Package
Qualification
Status
C3D1P7060Q
600 V
1.7 A
Gen 3
1.5 V
3 A
4 nC
35.5 W
QFN
Industrial
Obsolete

End of Section

Documents, Tools & Support

  • Technical & Sales Documents

Documents

4 Documents Available
Document Type
Document Name
Last Updated
Data Sheets
C3D1P7060Q
01/2024
Application Notes
Selection Guide of SiC Schottky Diode in CCM PFC Applications
09/2015
Sales Terms
Wolfspeed, Inc. Sales Terms and Conditions
04/2025
Sales Terms
Power Product Packing & Shipping Reference Guide
This document details the production packaging details including container type, quantity, MOQ, and dimensions as well as the moisture sensitivity level (MSL) for discrete SiC Schottky Diodes and MOSFETs.
03/2025

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PowerMakers

Powering Progress: Solving Complex Challenges with Innovation, AI and Purpose

Continue Reading  Thought Leadership
Powerful Perspectives

Inspiration to Beat Hesitation: 5 Reasons Silicon Carbide is an Unstoppable Force

Silicon carbide plays a role in the entire consumer and industrial supply chain, from turning wheels on roads to powering the chips in our data centers and the heat pumps in our homes.  
Continue Reading  Thought Leadership
Design Resources

Key Testing Considerations for Migrating from Silicon (Si) to Silicon Carbide (SiC) in Power Designs

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