Buck Boost Evaluation Board for 1200V Silicon Carbide C3M™ MOSFET in a TO-247-X Package
KIT-CRD-3DD12P
Note Obsolete. Recommended replacement:SpeedVal Kit
This evaluation board demonstrates the switching and thermal performance of 1200V 75mΩ Silicon Carbide (SiC) C3M™ MOSFET in a TO-247-4 package configured in a half bridge topology. The board is designed for characterizing EON and EOFF losses and steady state thermal performance in Silicon Carbide MOSFETs. The board can be configured to run as a buck or boost converter in either synchronous or asynchronous modes. The PCB also supports replacing the SiC MOSFETs with TO-247-3 package components to allow for evaluation of either package. A full LTSpice model including parasitic elements that nearly matches the performance of the hardware is available for download.
This design allows measurement of:
- Timing (TDelay-On; TDelay-Off; TRise; TFall)
- Overshoot (VDS-Max; ID-Max)
- Speed (di/dt; dv/dt)
- Switching Loss (EON; EOFF; ERR)
- Efficiency during operation up to 2.5kW
Specifications
- Max DC Input / Output Voltage of 800V
- Max Power of 2.5kW @ 100kHz (limited by on-board inductor; higher levels possible with alternate inductor)
- Compatible with TO-247-4 and TO-247-3 SiC MOSFETs;
- Compatible with TO-247 and TO-220 SiC Schottky diodes
- Dedicated gate drivers and isolated power supplies for each C3M SiC MOSFET
- Optimized locations for scope probe measurements of drain current; VGS; and VDS and IS
- Synchronous and asynchronous buck and boost topologies supported
- Kit includes two SMA to BNC adapters for measuring VGS waveforms
- Includes heatsink; thermal clips and isolated thermal pads
