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    面包屑导航

    • 主页
    • 产品
    • 功率
    • 参考设计
    • 25 kW高效率高功率密度双向T-型逆变器

    25 kW高效率高功率密度双向T-型逆变器

    CRD-25BDA6512N-K

    25 kW双向T-型逆变器展示了Wolfspeed 650 V和1200 V碳化硅 (SiC) MOSFET 在光伏逆变器、不间断电源 (UPS)、电动汽车快速充电桩、高压直流 (HVDC) 应用、人工智能/数据中心大功率 PSU 及储能系统等高功率系统中的性能表现。该参考设计提供了一套完整的评估工具,可作为新型碳化硅设计的开发起点,其具备两种工作模式:逆变器模式与功率因数校正 (PFC) 模式。

    该设计实现:

    • 逆变器模式与 PFC 模式峰值效率均>99%
    • 功率密度>6 kW/L

    逆变器模式规格:

    • 直流输入电压:800 V DC
    • 最大电流:36 A
    • 交流输出电压:380 – 480 Vline-line 50 / 60 Hz
    • 最大功率:25 kW
    • 开关频率:60 kHz

    PFC模式规格:

    • 三相输入电压:380 – 480 Vline-line 50 / 60 Hz
    • 最大电流:36 A
    • 直流输出电压:650 V – 900 V
    • 最大功率:25 kW
    • 开关频率:60 kHz
    Wolfspeed Power Reference Design CRD-25BDA6512N-K 25 kW Bi-directional T-type Inverter

    Knowledge Center

    查看所有

    超越硅基极限:
    高压碳化硅如何重新定义关键电源

    继续阅读  Thought Leadership

    Wolfspeed 300 mm 碳化硅技术:
    下一代 AI 与高性能计算先进封装的材料基础 

    继续阅读  技术文章

    响应市场需求,以可靠的碳化硅基固态变压器为 AI 人工智能赋能

    继续阅读  白皮书

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    应用

    • 光伏逆变器
    • 不间断电源(UPS)
    • 储能系统
    • 电动汽车快速充电
    • 工业电源

    包含

    设计文件,用于:

    • 主板

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    产品兼容性

    • C3M0032120K
    • C3M0025065K

    Documents, Tools & Support

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    Circuit block diagram of Wolfspeed Reference Design CRD-25BDA6512N-K
    Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
    C3M0032120K

    1200 V, 32 mΩ, 63 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

    Learn More
    Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
    C3M0032120K

    1200 V, 32 mΩ, 63 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

    Learn More
    Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
    C3M0032120K

    1200 V, 32 mΩ, 63 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

    Learn More
    Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
    C3M0032120K

    1200 V, 32 mΩ, 63 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

    Learn More
    Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
    C3M0032120K

    1200 V, 32 mΩ, 63 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

    Learn More
    Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
    C3M0032120K

    1200 V, 32 mΩ, 63 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

    Learn More
    Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
    C3M0025065K

    650 V, 25 mΩ, 97 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

    Learn More
    Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
    C3M0025065K

    650 V, 25 mΩ, 97 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

    Learn More
    Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
    C3M0025065K

    650 V, 25 mΩ, 97 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

    Learn More
    Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
    C3M0025065K

    650 V, 25 mΩ, 97 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

    Learn More
    Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
    C3M0025065K

    650 V, 25 mΩ, 97 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

    Learn More
    Image that includes both the front and back of the TO-247-4 package used for Wolfspeed's discrete Silicon Carbide power devices including SiC MOSFETs and Schottky diodes.
    C3M0025065K

    650 V, 25 mΩ, 97 A, TO-247-4 package, Gen 3 Discrete SiC MOSFET

    Learn More
    Angled product photo of the front and back of the TO-263-7 package used for Wolfspeed's Discrete Silicon Carbide MOSFETs.
    C2M1000170J

    1700 V, 1000 mΩ, 5.3 A, TO-263-7 package, Gen 2 Discrete SiC MOSFET

    Learn More
    UCC5350MCDWVR

    5A, High Voltage, Isolated Gate Driver with Internal Miller Clamp

    Learn More
    ACS733KLATR

    1 MHz Bandwidth, Galvanically Isolated Current Sensor IC

    Learn More
    TMS320F280039C C2000™

    32-bit MCU 120-MHz 384-KB flash, FPU, TMU with CLA, CLB, AES and CAN-FD

    Learn More

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